A 643 TRANSISTOR Search Results

TL092

Abstract: AN-643 signal path designer
Contextual Info: National Semiconductor Application Note 643 Joe Cocovich December 1989 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be

minor project proposal on electronics

Abstract: TL092 AN-643 signal path designer national special function analog and digital circuits
Contextual Info: National Semiconductor Application Note 643 Joe Cocovich April 2001 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be

C22B

Abstract: ESM692
Contextual Info: *ESM 642 *ESM 643 NPN SILICON TRANSISTORS, EP ITAXIAL PLANAR TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X Compì, of ESM 692, ESM 693 % Preferred device D is p o s itif recommandé High breakdow voltage Haute tension de claquage 300 V

TRANSISTOR 8052

Abstract: 8052 basic E03644 AD8305 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643
Contextual Info: AN-643 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Closed-Loop Control Circuit Implementation of the ADuC832 MicroConverter IC and the AD8305 Logarithmic Converter in a Digital Variable Optical Attenuator

zo 107 NA P 611

Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

Contextual Info: 19- 1783; Rev 0; 6/97 High-Efficiency, Step-Up DC-DC Converters for 1V Inputs Features The MAXI 642/MAXI 643 are high-efficiency, low-voltage, step-up DC-DC converters intended for devices pow­ ered by a single alkaline cell. They feature low quies­ cent supply currents and are supplied in the ultra-small

f640

Abstract: IR 643 643R
Contextual Info: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

055E-3

Abstract: csd261 PNP transistor TO-92 BC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available

MP42141

Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available

BF298

Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

2n2222 -331 transistors

Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111

ksd 250v 10a

Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

monochrome monitor schematic

Abstract: CR3424R MSK643 MSK643B high voltage crt transistor 643
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease

Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease

F508

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease

transistor 643

Abstract: CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2nS Transition Times Drives 8.5pF Capacitive Load With Ease

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease