A 3055 Search Results

PNP 2SD

Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055

2N3055

Abstract: 2N3055 curve 2n6253 2N6371 2N 6254
Contextual Info: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts M A X IM U M RATINGS Ic V V V A laarca i h FE liv r a MIN M AX El A V<fE V Sat Voltages V be V« V V Test Conditions Ib Ic A A IE B P ma 2N 3055 117 100 60 7 15 20 70 4 4 1.1 1.8 4 .4 5.0 2N 6253 115 55 45 5 15 20

BDX 71

Abstract: 3055C BD142 40251 C 5039 2N6354
Contextual Info: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10

3055 5C pnp transistor

Abstract: 3055 5c pnp transistor 3055 3055 transistor 3055 la transistor 2N 3055 2N 3055 transistor 468 2n 3055 transistor 3055 pnp
Contextual Info: * 2 N 3055 S PNP S IL IC O N T R A N S I S T O R , H O M O B A S E T R A N S IS T O R P N P S IL IC IU M , H O M O B A S E A Devices u n d er C C Q 1971 n° 100 D is p o s it if s s o u m is a u C o n t r ô le c e n tra lis é d e q u a lit é (1 9 7 1 n ° 100)

3 PIN hall effect sensor

Abstract: 4 pin hall sensor hall effect sensor 4 pin transistor Amp 3055 "Hall Effect Sensor" 3055 transistor 4 pin package hall sensor 80 L hall effect sensor can bus automotive chrysler ic
Contextual Info: 3055 3055 Data Sheet 27680 MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR IC MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the

transistor 3055

Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
Contextual Info: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.

Contextual Info: 3055 MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as well as the status of

Contextual Info: w GEC PLESSEY A D V A N C E IN F O R M A T IO N S E M I C O N D U C T O R S 3055-2.1 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER The SL486 is a high gain preamplifier designed to form an interface between an inf ra-red receiving diode and the digital input

transistor Amp 3055

Abstract: chrysler ic MH002A hall effect current sensor ic 4 wired UGN3055U UGS3055U Sprague Hall Effect Allegro Hall-Effect ICs EH00
Contextual Info: 3055 Data Sheet 27680 3055 MULTIPLEXED TWO-WIRE HALL EFFECT SENSOR IC MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs DISCONTINUED PRODUCT Shown for Reference Only The UGN3055U Hall-effect sensor IC is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a

transistor Amp 3055

Abstract: hall effect sensor 4 pin 452 hall sensor 9v 3 pin MH002A SENSOR HALL 452 sip 3 hall sensor 80 L UGN3055U UGS3055U open drain in hall effect sensor SENSOR HALL 452
Contextual Info: DISCONTINUED PRODUCT Shown for Reference Only 3055 Data Sheet 27680 3055 MULTIPLEXED TWO-WIRE HALL EFFECT SENSOR IC MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a

TP3055E

Abstract: 40AMJ tp3055 MTP3055E MTP3055EFI TP3055EFI GC2809D
Contextual Info: SGS-THOMSON * 5 3055E M TP3055EFI mtp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI • . ■ . ■ ■ . V dss RDS(on) Id 60 V 60 V < 0.15 £2 < 0.15 a 14 A 10 A TYPICAL RDS(on) = 0.1 AVALANCHE RUGGED TECHNOLOGY

N3055

Abstract: e 3055 t hall sensor interface UGS3055U 3055m
Contextual Info: 3055 MULTIPLEXED TWO-WIRE HALL EFFECT SENSOR ICs I- The UG N3055U and UGS3055U Hall effect sensors are digital magnetic sensing ICs capable of com m unicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

2N3055

Abstract: 3055 transistor 3055 3055 transistor 2N 3055 TRANSISTOR BDX 285 TRANSISTOR BDX 286 3055 la transistor 2N 3055 power transistor 3055
Contextual Info: * 2 N 3055 * B D Y 73 NPN S ILIC O N TR A N S IS TO R S , HOMOBASES T R A N S IS T O R S N P N S IL IC IU M , H O M O B A S E S 2N 3055 compì, o f B D X 18, B D X 18N îfc P referred device D is p o s itif re c o m m a n d é - LF large signal power amplification

awm 1007 cable specification

Abstract: TR-64
Contextual Info: ALPHA WIRE COMPANY CUSTOMER PRODUCT SPECIFICATION Part Number: 3055/1 Page 1 of 1 Pages A. Construction 1 Component 1 a) Conductor b) Insulation 1) Print Issue: Issue Date: Effective Date: 4 4/21/2005 6/30/2005 Diameters 1 X 1 HOOKUP 18 (SOLID) AWG TC 0.016" Wall, Nom. PVC

Contextual Info: BSP17/3055 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V) I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

3055e mos

Abstract: TK3055E STK3055E 3055E stk3055 3055EN TK3055
Contextual Info: SGS-THOMSON ir a u » K S S TK 3055E N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss R D S o n Id S TK3055E 60 V 0 .1 5 £1 13 A , „ „ , , , AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

MTP3055EL

Abstract: 3055el TP3055EL TP3055E
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 3055E L Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate T h is a d v a n c e d E-FET is a T M O S p o w e r M O S F E T d e s ig n e d to w ith s ta n d h ig h e n e rg y in

marking WMM

Abstract: WS-002
Contextual Info: RoHS COMPLIANT RS CUSTOMER: P /N : 3 0 5 -5 9 8 REV. . APPROVED REVISIONS BY: REV. DESCRIPTION A 2010±50 DATE A BLUE NOTES: 1. 2. G R N /Y E L -c BROWN - 4 - 0 y 3. Z0680140 Ü R ^ 18X 15 II^EIg Pantone 185 Ä|/Jvg MARKING: R Hfifc ! 305598 10A 250V- Power Cord

transistor 3055

Abstract: DIODE IN 3055 TR 3055 6N135 6N136 VDE0884
Contextual Info: 6N135-3054/6N136-3055 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES • • • • NC 1 8 C VCC B (VB) A 2 7 C 3 6 C (VO) NC 4 5 E (GND) i179081 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with

3055 transistor

Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

x2402

Contextual Info: 8 0 0 M H z to 1000M H z Transm itter In a ty p ic a l a p p lic a tio n , a d ig ita l b a se b a n d signal is m ix e d w ith a lo c a l o s c illa to r sig n a l to y ie ld a BPSKm o d u la te d c a rrie r a t th e a n te n n a . A lte rn a tiv e ly , the

40372

Abstract: 2N3054 2N5575 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.