AA35B05 Search Results

SDA5241

Abstract: sda 5241 a5006 sda 5231-2 sync STT 3 SIEMENS
Contextual Info: SIE D • fl53SbG5 DD441S2 TT4 « S I E G S IE M E N S - c - - n ~ c > - t- i3 SIEMENS AKTIENGESELLSCHAF SD A 5231-2 Data Slicer for Teletext Bipolar IC Preliminary Data Features • Crystal-stable data clock regeneration for a bit rate of 6.9375 MHz • Separation and regeneration of teletext infor­

Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

Contextual Info: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028

BFT66

Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Contextual Info: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband

ZO 607 MA 7A 523

Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Contextual Info: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability

AF379

Abstract: transistor D 379 AF 379 Q62701-F72 5C p Germanium power CE013
Contextual Info: 2SC D • ÖS3SbD5 0QQ4QÔS 5 « S I E G T - 3t~ O f PNP Germanium RF Transistor AF 379 - SIEMENS AKTIENßESELLSCHAF -for large sig n a l a p p lica tio n s u p to 9 0 0 M H z A F 3 7 9 is a PN P germanium planar RF transistor in 5 0 B 3 DIN 4 1 8 6 7 plastic package

Contextual Info: SIEM ENS A udio R inging C odec Filter B asic Function A R C O FI-B A Version 1.1 1.3 PSB 2161 BICMOS Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CODEC functions • Fully compatible to the ITU-T G. 712 and ETSI

ft66

Abstract: BFT66
Contextual Info: ZSC D • fl23SbüS ÜGGM7Qä 1 « S I E G Extremely Low Noise NPN Silicon Broadband Transistors , Kr n/. 8 D ~ T -it'/r BFT 66 BFT 67 SIEMENS AKTIENGESELLSCHAF BFT 66 and BFT 67 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 , intended for input stage applications in extremely low-noise broadband

q1257

Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
Contextual Info: SIEM ENS Multichannel Network Interface Controller for HDLC MUNICH32 PEB 20320 CMOS 1C Version 3.4 1.1 Features • Serial Interface - Up to 32 independent communication channels. - Serial multiplexed full duplex input/output for 2048-, 4096-, 1544- or 1536-Kbit/s PCM

0s35

Abstract: b17 zener diode
Contextual Info: SIEMENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^DS(on) 28 m£2 • Thermal Shutdown Current limit 25 A • Overload protection Nominal load current

Transistor BFT 99

Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF