Y5117 Search Results

HY5117404a

Abstract: KRAH
Contextual Info: “H Y U N D A I ^Y5117404A, HY5116404A 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode

PRESET 10Kohm

Abstract: JESD-B103B Y5117PC
Contextual Info: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits  One part for different input and output voltage ranges  One part with up to 17A output  Reduces number of different parts in inventory  Compatible with conventional pick-and-place

SR-332

Abstract: Y5117P Y5117PC
Contextual Info: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place

Contextual Info: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place

PTC- 8100

Contextual Info: Y5117P 17A DC-DC POL Preliminary Data 3.0V to 13.2V Input • 0.7V to 3.6V Output Y5117P Member of the Family Industry First Vertical Surface Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts

HY5117404A

Abstract: HY5117404Aj
Contextual Info: HYUNDAI Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The H Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

jc 216 sc

Abstract: 1MX1
Contextual Info: Y5117100 Series •HYUNDAI 16Mx 1-bit C M O S DRAM DESCRIPTION The H Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating

B103

Abstract: Y5117P 4.7uF 25V X7R C05C0
Contextual Info: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Industry’s First Vertical Surface -Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output • Reduces handling of multiple parts

Contextual Info: Y5117P 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible

Contextual Info: Y5117P 17A DC/DC Point of Load Converter 3.0V to 13.2V Input • 0.7V to 3.63V Output Preliminary Member of the Family Industry’s First Vertical Surface-Mount SIP Benefits • One part for different input & output voltage ranges • One part with up to 17A output

HYM536410CM

Contextual Info: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

HY5117404

Abstract: HYM532414A
Contextual Info: «HYUNDAI HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 532414A is a 4M x 32-bit EDO mode C M O S DRAM module consisting of eight H Y5117404A in 24/26 pin SOJ or TSO PII on a 72 pin glass-epoxy printed circuit board. 0.1* -and 0.01* «decoupling are

JESD-B103-B

Abstract: 3 pin preset resistor 10k SR-332 Y5117P Y5117PC
Contextual Info: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place

Contextual Info: Y5117 17A DC-DC POL Data Sheet 3.0V to 13.2V Input • 0.7V to 3.63V Output Member of the Family Benefits • One part for different input and output voltage ranges • One part with up to 17A output • Reduces number of different parts in inventory • Compatible with conventional pick-and-place

Contextual Info: Y5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The Y5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The Y5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

1MX16BIT

Abstract: 16MX1
Contextual Info: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE

PP-T20

Abstract: HY5117400B bel power QBS
Contextual Info: Y5117400B Series HYUNDAI 4M X 4-bit CM O S DRAM DESCRIPTION The Y5117400B is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The Y5117400B utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

HY5117400A

Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
Contextual Info: Y5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The Y5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he Y5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI H Y M 5 6 4 4 1 4 A N - S e r i e s 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen Y5117404A in 24/28 pin SOJ o r TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

Contextual Info: • ‘H Y U N D A I * Y5117800C,HY5116800C > 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynam ic RAM organized 2 ,0 9 7 ,1 5 2 x 8-bit configuration with Fast P age m ode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. T h e circuit and process design allow this

rsst5

Contextual Info: “HYUNDAI Y5117404B Series 4M x 4-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The Y5117404B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5117404A

Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Contextual Info: “H Y U N D A I Y5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The Y5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The Y5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide