VPS05604 Search Results

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

BCR08PN

Abstract: VPS05604
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

BC847PN SOT363

Abstract: VPS05604 BC847PN Marking 1ps sot
Contextual Info: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation

BCR129S

Abstract: VPS05604
Contextual Info: BCR129S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k) 2 3 1 C1 B2 E2 6 5 4 VPS05604

BCR169S

Abstract: VPS05604 marking WSs
Contextual Info: BCR169S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2

BCR198S

Abstract: VPS05604
Contextual Info: BCR198S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604

VPS05604

Abstract: WFs transistor
Contextual Info: BCR 08PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) 2 1 VPS05604

6A1 diode

Abstract: BAS70-06S VPS05604
Contextual Info: BAS70-06S Silicon Schottky Diode Array 4
General-purpose diode for high-speed switching 5 6
Circuit protection
Voltage clamping
High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S

BFS483

Abstract: G1410 VPS05604
Contextual Info: BFS483 NPN Silicon RF Transistor 4
For low-noise, high-gain broadband amplifier 5 6 at collector currents from 2 mA to 28 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2

wgs-1

Abstract: BCR116S VPS05604
Contextual Info: BCR116S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k, R 2=47k) 2 3 1 VPS05604

W1s transistor

Abstract: marking W1S BCR10PN VPS05604
Contextual Info: BCR10PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R 1=10k, R2 =10k) 2 3 1 VPS05604 Tape loading orientation

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BCR169S

Abstract: VPS05604
Contextual Info: BCR169S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2

BG3230

Abstract: BG3230R VPS05604
Contextual Info: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes

VPS05604

Abstract: H21E
Contextual Info: SMBT 3904PN NPN/PNP Silicon Switching Transistor Array Preliminary data 4
High current gain 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1

BCR119S

Abstract: VPS05604
Contextual Info: BCR119S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 C1 B2 E2 6 5 4 VPS05604

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

BCR15PN

Abstract: infineon marking W1s BCR108S E6327 VPS05604 marking code w1s
Contextual Info: BCR15PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) 2 3 1 VPS05604

Contextual Info: BAT68-08S 4 Silicon Schottky Diode Array 5 6
For mixer application in the VHF/UHF range
For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device

Contextual Info: BFS482 NPN Silicon RF Transistor 4
For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA
f T = 8 GHz F = 1.2 dB at 900 MHz
Two galvanic internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5

h11e

Abstract: transistor BC 660
Contextual Info: BC846PN NPN/PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation