V01TS Search Results

2n511

Abstract: 2N511A Texas Germanium 2N511B Germanium Transistor 2n511 transistor 9012 transistor power germanium transistor pnp Germanium power
Contextual Info: TYPES 2N511, 2N511A, AND 2N511B P-N-P ALLOY-JUNCTION GERMANIUM HI6H-P0WER TRANSISTORS 40, 60 or 80 V01TS 10-A M P COLLECTOR CURRENT 150 -W ATT DISSIPATION lO W Ijo LOW VBE LOW THERMAL RESISTANCE for HIGH-POWER CONVERSION • HIGH-CURRENT SWITCHING AUDIO AMPLIFIER OUTPUT STAGES

max672

Contextual Info: j v k æ x a j v k + 5 V, +10V Precision Voltage References General Description _ Features _ ♦ Pretrimmed to +5V, +10V +0.05% The MAX672 and MAX673 are precision voltages references that are pretrimmed to within ±.05% of 10V

1N474BA

Abstract: 1N474SA IN4742A 1N472BA AMERICAN POWER DEVICES 1N4734A 1N474B 1N47S9A in4756a 1N4730A 1N4731A
Contextual Info: AMERICAN POWER DEVICES STE J> □ 73713S ÜQQÜGME IflS • AP» r-n-iS 1N4728A-1N4764A american S E M IC O N D U C T O R S Standard tolerances are 5% 10%, 2% & 1% are available power devices, inc. 1 W silicon zener diodes MECHANICAL CHARACTERISTICS FEATURES

MRF580

Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Contextual Info: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.

Contextual Info: FEATURES • 20-300 MHz ■ 53 dB Linear Range ■ SMA Connectors & MODEL NO. 100C0912 PIN Diode Linear VCA ■ See DA0098 For DIP Version S cP J2 A Ò Ò Ò Ò -1SV +15V CONT GND .XX • .02 .XXX > .010 TYPICAL PERFORMANCE GUARANTEED PERFORMANCE ATTENUATION VS CONTROL VOLTAGE

944B

Abstract: 1N941B IN946 IN944 RH944 1N941 1N941A 1N942 1N946B 943B
Contextual Info: 1N941 thru Micro/semi Corp. 1N946B 1 The d ’Ode experts SANTA ANA, C'A SCOTTSDALE, A Z F or m ore in fo rm atio n call: 602 941-6300 FEATURES 11.7 VOLT TEM PERATURE CO M PEN SATED ZENER REFERENCE D IO D E S • ZENER VOLTAGE 11.7V ± 5 % • 1N941B, 943B, 944B. 945B HAVE JAN, JANTX, JANTXV, AND -1 QUALIFICATIONS

P420L

Abstract: P344L COP420L COP445L E3VU P345L P34XL Diode p420l
Contextual Info: COP444L/COP445L/COP344L/COP345L National A M Sem iconducto r COP444L/COP445L/COP344L/COP345L Single-Chip N-Channei Microcontrollers General Description Features The CO P444L, CO P445L, CO P344L, and CO P345L SingleChip N-Channel Microcontrollers are members of the

rca tube OC 3

Abstract: GT40 GT-40 869B rca 30 tube
Contextual Info: HALF-WAVE MERCURY-VAPOR RECTIFIER GENERAL DATA E lectr i c a l : Filam entary Cathode, Coated: 5± % Vol t a g e . C u r r e n t . 19 Minimum Heating Time at Rated Voltage Peak Tube Voltage Drop Approx.

UFN130

Contextual Info: UNITRODE CORP 9347963 TB U N I T R O D E CORP DE | T 3 4 7 cibB OOlObDt. 92D POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel 10606 D [M UFN132 UFN133 T ' - 3 ci' - i FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

G115

Abstract: G115AP G115B G115BP
Contextual Info: designed fo r . Gl 15 s M onolithic 6-Channel Enhancem ent-Type MOS FET Switch Siliconix BENEFITS R educes Extern al C om ponent Requirem ents • Sw itching A nalo g Signals In te rn a l Z e n e r D io d e P ro te cts th e Gate S ix S w itc h e s Per C hip

4116 ram

Abstract: RAM 4116 4116 4116 16k ram MK4116 4116-2 MK 4027 41163 4116 MEMORY i251
Contextual Info: MOSTEX 16,384 X 1-BIT DYNAMIC RAM MK4116 J /N /E -2 /3 FEATURES □ Recognized industry standard 16-pin config­ uration fro m M O S T E K □ C om m on I/O capa b ility using "early w rite " operation □ 150ns access tim e , 3 2 0 n s c y c le (M K 4 1 1 6 -2 )

Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

1SV50

Abstract: 2N6151 2N67 2N6757 2N6758
Contextual Info: 3875081 G E SOL ID STATE 01 î î f | 3a?SG fll 001ö3öfl b ¥_ 1 T-39-11 Standard Power MÔSFËTs 2N6757, 2N6758 F ile N u m b e r 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CH A NN E L EN HA N C E M E N T MODE

MCM6287

Abstract: MCM6287P MCM6287P35 MCM6287-25
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MCM6287 64K x 1 Bit Static Random A ccess Memory The MCM6287 is a 65,536 bit static random access memory organized as 65,536 words of 1 bit, fabricated using Motorola's second-generation high-performance silicon-gate

19 khz fm stereo decoder circuit

Abstract: FM Stereo Decoder Integrated Circuit FM Stereo Multiplex Decoder 3-8 decoder circuit diagram HA767 stereo multiplex decoder A767 fm stereo equivalent multiplex FM stereo MPX Decoder
Contextual Info: HA767 x FM STEREO M ULTIPLEX DECODER FAIRCHILD LINEAR INTEGRATED C IR C U IT G E N E R A L D E S C R IP T IO N — T h e i x A l Q l is a m o n o lith ic F M S te re o M u ltip E e x D e c o d e r S y s te m c o n s tru c te d o n a sin gle s ilic o n c h ip u s in g th e F a ir c h ild P la n a r* e p ita x ia l process. T h is in te g ra te d

221A-04

Abstract: D44E D45E
Contextual Info: . MOTOROLA SC -CXSTRS/R F> [" 6 3 6 7 2 5 4 MOTOROLA SC Tb CXSTRS/R D E § h3 L >7 2 S4 96D 8088J?_— fi. F ODflOflflD T -33-33 _ NPN MOTOROLA D44E Series SEM IC O N D U C TO R PNP TECHNICAL DATA D45E Series C O M P L E M E N T A R Y S ILIC O N PO W ER

Contextual Info: 1N 4057 thru 1N 4085 A SANTA ANA, CA SCOTTSDALE. AZ Tor m ine ;niiirm.i!ii>n fall. (602 941-6300 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES . ZENER VOLTAGE 12.4V to 200V * TEMPERATURE COEFFICIENT RANGE: 0.005% /°C to 0.002% /°C MAXIMUM RATINGS

SKP33A

Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
Contextual Info: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­

Contextual Info: • 3 H A R 0054130 R I lût ■ HAS I R S I R F F 1 1 F R F 1 1 / 1 1 1 / 1 1 1 R / 1 / 1 1 1 2 R 2 / 1 1 3 1 3 R / 1 N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features T0 -20 5A F BOTTOM VIEW • 3.0A and 3.5A, 80V - 100V

PC10PC9

Abstract: CMOS F4S 426C COP224C COP225C COP226C COP244C COP245C COP400 OBD III
Contextual Info: COP224C/COP225C/COP226C/COP244C/COP245C yn National ÉSASemiconductor COP224C/COP225C/COP226C/COP244C/COP245C Single-Chip 1k and 2k CMOS Microcontrollers General Description Features The COP224C, COP225C, COP226C, COP244C and COP245C fully static, Single-Chip CMOS Microcontrollers

MRF644

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e 25 W - 470 MHz C O N TRO LLED Q R F POWER TR A N S IS TO R NPN S ILIC O N R F POWER T R A N S IS TO R NPN SILIC O N . . designed for 12.5 V o lt U H F large-signal am plifier applications in industrial and commercial FM equipment operating to 512 MHz.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC5007 MOC5008 MOC5009 6-Pin DIP Optoisolators Logic Output . . . g a lliu m arsenide IRED o p tic a lly co up le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lic a tio n s re q u irin g e le ctrica l is o la tio n , fa s t

diode sy 710

Abstract: sy 710 diode FN121 ufn120 V01T
Contextual Info: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.

2N69S

Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Contextual Info: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching