UPC2713T Search Results

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FR EQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5(UPC2710T) m TJ • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE Ô . SV SINGLE SUPPLY VOLTAGE

UPC2710T-E3

Abstract: UPC2713T UPC2713T-E3 t06 49 uPC2710 UPC2710T t06 93
Contextual Info: 1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER UPC2713T GAIN vs. FREQUENCY FEATURES • FREQUENCY RESPONSE: 1.5 GHz • SATURATED OUTPUT POWER: +13.5 UPC2710T • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

UPC2713T-E3

Abstract: UPC2713T
Contextual Info: 1.5 GHz SILICON MMIC UPC2713T WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 35 • FREQUENCY RESPONSE: 1.5 GHz • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE Gain, GS dB • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • 5 V SINGLE SUPPLY VOLTAGE

Contextual Info: •K SEC » •xt* ' 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE

PC2713T

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC271OT UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: +13.5 (UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

Contextual Info: 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2710T UPC2713T FEATURES_ • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB UPC2710T • SATURATED OUTPUT POWER: + 13.5(UPC2710T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

t06 sot 23

Abstract: UPC2710 upc2713
Contextual Info: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.

MARKING c1y

Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART