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    UPC1676B Search Results

    UPC1676B Datasheets (2)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPC1676B
    NEC Bipolar analog integrated circuit Original PDF 45.45KB 8
    UPC1676B
    NEC 1.2 GHz Bandwidth Low Noise Silicon MMIC Amplifier Scan PDF 118.94KB 4

    UPC1676B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPC1676G-T1

    Abstract: UPC1676 16ANG UPC1676B UPC1676G UPC1676P mmic case styles
    Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION


    Original
    upc1676bupc1676gupc1676pupc1676+3upc1676g-t116angmmic case styles PDF

    UPC1676G-T1

    Abstract: UPC1676 UPC1676B UPC1676G UPC1676P
    Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION


    Original
    upc1676bupc1676gupc1676pupc1676+1upc1676g-t1 PDF

    UPC1676B

    Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
    Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for UPC1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P


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    upc1676bupc1676gupc1676pupc1676b/p+2upc1676mmic s5 PDF

    PC1676G

    Contextual Info: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P


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    upc1676gupc1676bupc1676pupc1676+2upc1676g-t1pc1676g PDF

    UPC1676B

    Abstract: VCC 3802 Axis 210 UPC1676G
    Contextual Info: N E C / CALIFORNIA SbE D • t.427414 0002bS0 334 » N E C C NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER — - T - 1 4 -13- 0 I OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E BANDW IDTH: 1200 MHz TYP at 3 dB Point for UPC1676G


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    0002bs0upc1676bupc1676gupc1676p+6ot-143upc1676b/pupc1676wide-ba107vcc 3802axis 210 PDF

    Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P


    OCR Scan
    upc1676bupc1676gupc1676pot-143+11676g PDF

    Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz


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    upc1676gupc1676bupc1676pupc1676 PDF

    UPC1676B

    Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY FEATURES WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz


    OCR Scan
    upc1676gupc1676bupc1676pupc1676 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720 PDF

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


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    transistor t06t06 transistortransistor t06 192sc 930 af+5t06 93upc1678blt 5219upc8103tupc8108t PDF

    mmic a08

    Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
    Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18


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    mmic a08t06 transistortransistor t06b584b+6b585b544 mmicupc1675mmic prescaler divide by 64upc1668bupc1678b PDF

    Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON M M IC AMPLIFIER upG1677C UpG1677p UPC1677C INSERTION GAIN vs. FREQUENCY FEATURES_ • HIGH POWER OUTPUT: +19.5 dBm V C C -5 V • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down 40 30 • HIGH POWER GAIN: 24 dBtyp at 0.5 GHz


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    upg1677cupg1677pupc1677cupc1677+2upc1677bupc1677p PDF