UPC1676P Search Results

UPC1676G-T1

Abstract: UPC1676 16ANG UPC1676B UPC1676G UPC1676P mmic case styles
Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION

UPC1676G-T1

Abstract: UPC1676 UPC1676B UPC1676G UPC1676P
Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION

UPC1676B

Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for UPC1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P

PC1676G

Contextual Info: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P

UPC1676B

Abstract: VCC 3802 Axis 210 UPC1676G
Contextual Info: N E C / CALIFORNIA SbE D • t.427414 0002bS0 334 » N E C C NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER — - T - 1 4 -13- 0 I OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E BANDW IDTH: 1200 MHz TYP at 3 dB Point for UPC1676G

Contextual Info: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P

Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz

UPC1676B

Contextual Info: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY FEATURES WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18