UN111H
Abstract: XN111H
Contextual Info: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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UN111H
Abstract: XP111H
Contextual Info: Composite Transistors XP111H Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN111H x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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UN111H
Abstract: UNR111H XP0111H XP111H
Contextual Info: Composite Transistors XP0111H XP111H Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR111H(UN111H) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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xp0111hxp111hunr111hun111h |
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UN111H
Abstract: UNR111H XN0111H XN111H
Contextual Info: Composite Transistors XN0111H XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR111H(UN111H) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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unr111xun111xunr1110unr1111+1unr1112
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Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1.25±0.10 2.1±0.1 Features Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111d/111e/111f/111h/111lun1111un1112un1113+8un1114un1115un1116un1117un1118un11191117 s transistorun1110
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tr231
Abstract: UN111F UN111H XN611FH
Contextual Info: Composite Transistors XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Collector to base voltage
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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SC59A
Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
Contextual Info: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF
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rt1p134srt1p441ct1p441mrt1p441s+12n111dun111esc-59aun212y47k/10kun211dsc59art1n441crt1p441mrt1n434sun111hun112x
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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unr111xun111xun1110un1111+16un1112un1113un1114un1115un1116un1117unr1110unr1111unr1112unr1113unr1114unr1115unr1116unr1117unr1118unr1119
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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un1000600mwun2000200mw+13n2111un2112un2113un2114un2115un2116un7000un8000un9110unr921cjun1219un4115un1211
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Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1 2 5° 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo
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xp0611fhxp611fhunr111fun111f+2unr111hun111h
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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ad9272p462-ndlng295lfcp2up463-nd+11lng395mftp5u220v ac voltage stabilizer schematic diagramlg color tv circuit diagram tda 93701000w inverter pure sine wave schematic diagramschematic diagram atx power supply 500wtv sharp ic tda 9381 pscircuit diagram wireless spy camera9744 mini mainboard v1.2sony 279-87transistor e 13005-2superpro lx
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common collector PNP
Abstract: UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ
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unr111xun111xun1110un1111+16un1112un1113un1114un1115un1116un1117common collector pnpunr1110unr1111unr1112unr1113unr1114unr1115unr1116unr1117unr1118
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equivalent transistor n 4212
Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
Contextual Info: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )
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un1000600mwun1111un1112+14un1113un1114un1115un1116un1117un1118equivalent transistor n 4212n 4212n4212n111fn621dun4115un1211un4211 equivalent
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UN111F
Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH
Contextual Info: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor 3 2 5° 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) ● Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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UN111H
Abstract: UNR111H XP0111H XP111H
Contextual Info: Composite Transistors XP0111H XP111H Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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xp0111hxp111hunr111hun111h+150nductor
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UN111F
Abstract: UN111H XP611FH
Contextual Info: Composite Transistors XP611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● +0.05 0.12 –0.02 0 to 0.1 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.
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XP0611FH
Abstract: XP611FH UN111F UN111H UNR111F UNR111H
Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor (0.425) Unit: mm For switching/digital circuits 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 ● Two elements incorporated into one package. (Transistors with built-in resistor)
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UN111F
Abstract: UN111H UNR111F UNR111H XN0611FH XN611FH
Contextual Info: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100
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xn0611fhxn611fhun111fun111h+2unr111funr111h
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