UN1119 Search Results

UN1119

Abstract: UN221N UNR1119 UNR221N XP04286
Contextual Info: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1

UN1119

Abstract: UNR1119 XP01119 XP1119
Contextual Info: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1119(UN1119) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

UN1119

Abstract: UNR1119 XN01119 XN1119
Contextual Info: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1119(UN1119) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

UN1119

Abstract: XP1119
Contextual Info: Composite Transistors XP1119 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1119 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

UN801

Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm For camera UN1119+2SD1119 ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1 ■ Absolute Maximum Ratings Parameter P N P

UN1119

Abstract: UN1213 XP04387
Contextual Info: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings

UN1119

Abstract: XN1119
Contextual Info: Composite Transistors XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1119 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

2SD1119

Abstract: UN1119 UN801
Contextual Info: Composite Transistors UN801 Silicon PNP epitaxial planer transistor Silicon NPN epitaxial planer transistor Unit: mm M Di ain sc te on na tin nc ue e/ d For camera UN1119+2SD1119 ● 2 5 3 4 0.6±0.1 • Absolute Maximum Ratings Parameter Unit Collector to base voltage

UN1119

Abstract: UN1213 XP04387
Contextual Info: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings

un604

Contextual Info: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name 2SA1674 UN601 DC-DC converter UN602 UN604

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

UN1114

Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

d20 diode

Abstract: PA-120
Contextual Info: Transistors Selection Guide by Applications and Functions Composite Transistors # 6 Pin Mini Power Type (D20): Diode +Transistors, Transistors, Resistor Built-in Transistors DC-DC converter UN602 UN603 UN604 Camera UN801 Vceo (V) (A) typ. (V) 2SA1674 Diode

UN603

Contextual Info: Transistors Selection Guide by Applications and Functions • Composite Transistors • 6 Pin Mini Power Type (D17): Diode + Transistors + Resistor Built-in Transistors Application Functions Type No. Transistor Chip Name 2SA1674 UN601 (V) lc (A) - 80 - 1

Contextual Info: Panasonic Composite Transistors XP04387 Silicon NPN epitaxial planer transistor T ri Silicon PNP epitaxial planer transistor (Tr2) U nit: mm For sw itching/digital circuits • • • ■ • Features Two elements incorporated into one package. (Transistors with built-in resistor)

UN1119

Abstract: UNR1119 XP01119 XP1119
Contextual Info: Composite Transistors XP01119 XP1119 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

XP04286

Abstract: UN1119 UN221N
Contextual Info: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage

UN1119

Abstract: UNR1119 XN01119 XN1119
Contextual Info: Composite Transistors XN01119 XN1119 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 (0.65) 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element

UN7000

Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Contextual Info: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )

UN603

Abstract: UN602 2SA1674 UN601 MA720 UN604 "TRANSISTORS SELECTION GUIDE" MAX80A
Contextual Info: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name VcEO lc (V) (A) -80 -1 2SA1674 UN601 DC-DC

UN1219

Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Contextual Info: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10