Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TBM42 Search Results

    SF Impression Pixel

    TBM42 Price and Stock

    Festo

    Festo SOOC-TB-M4-2-R25 (552812)

    PHOTOELECTRIC;FIBER-OPTIC ;THRU BEAM ,FOR SOE4;M4;2M CBL;25MM BND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SOOC-TB-M4-2-R25 (552812) Bulk 1
    • 1 $38.25
    • 10 $38.25
    • 100 $38.25
    • 1000 $38.25
    • 10000 $38.25
    Get Quote

    Festo SOOC-TB-M4-2-R25-S4 (552813)

    PHOTOELECTRIC;FIBER-OPTIC ;THRU BEAM ,FOR SOE4;M4;2M CBL;25MM BND;40MM SLEEVE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SOOC-TB-M4-2-R25-S4 (552813) Bulk 1
    • 1 $40.26
    • 10 $40.26
    • 100 $40.26
    • 1000 $40.26
    • 10000 $40.26
    Get Quote

    TBM42 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its


    OCR Scan
    tbm42km41v4000bllkm41v4000bll-7130ns+5km41v4000bll-8150nskm41v4000bll-10100ns180ns PDF

    Contextual Info: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan
    km29n16000t/r PDF

    Contextual Info: KS16120B Preliminary DSP for Digital Answering phone with ARAM interface INTRODUCTION KS16120B is a digital signal processor IC that implements all the 80-Q FP-1420C functions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.


    OCR Scan
    ks16120b4m/16m-24db PDF

    irf9610 samsung

    Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan
    b41420q122bbirf9610/9611irf9610+4irf9611irf9612irf9613irf9610 samsung PDF

    Contextual Info: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan
    km44c1003dt71b414244c1003dt7rb4142 PDF

    Contextual Info: N-CHANNEL POWER MOSFETS IRFP254 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    irfp254fp254 PDF

    KM641003A

    Abstract: KM641003A-12 KM641003A-15
    Contextual Info: CMOS SRAM KM641003A 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641003A-12 : 200 mA(Max.) KM641003A-15 : 190 mA(Max.)


    OCR Scan
    km641003akm641003a-12km641003a-15km641003a-17+5km64t003a-20km641003aj32-soj-400km641003at32-tsop2-4qof PDF