TBM42 Search Results
TBM42 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its | OCR Scan | Tbm42 KM41V4000BLL KM41V4000BLL KM41V4000BLL-7 130ns KM41V4000BLL-8 150ns KM41V4000BLL-10 100ns 180ns | |
| Contextual Info: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte | OCR Scan | KM29N16000T/R | |
| Contextual Info: KS16120B Preliminary DSP for Digital Answering phone with ARAM interface INTRODUCTION KS16120B is a digital signal processor IC that implements all the 80-Q FP-1420C functions and hardware interfaces necessary for voice compression, storage and digital telephone answerer. | OCR Scan | KS16120B KS16120B 4M/16M -24dB | |
| irf9610 samsungContextual Info: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance | OCR Scan | b4142 0Q122bb IRF9610/9611 IRF9610 IRF9611 IRF9612 IRF9613 irf9610 samsung | |
| Contextual Info: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power | OCR Scan | KM44C1003DT 71b4142 44C1003DT) 7Rb4142 | |
| Contextual Info: N-CHANNEL POWER MOSFETS IRFP254 FEATURES • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability | OCR Scan | IRFP254 FP254 | |
| KM641003A
Abstract: KM641003A-12 KM641003A-15 
 | OCR Scan | KM641003A KM641003A-12 KM641003A-15 KM641003A-17 KM64t003A-20: KM641003AJ 32-SOJ-400 KM641003AT 32-TSOP2-4QOF KM641003A KM641003A-12 KM641003A-15 |