IRFP254 Search Results

Contextual Info: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP254 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 25 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP254B

Contextual Info: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

035H

Abstract: IRFPE30
Contextual Info: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ

Power MOSFET 50V 10A

Abstract: 108D IRFP254A
Contextual Info: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

035H

Abstract: IRFPE30
Contextual Info: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ

035H

Abstract: IRFPE30
Contextual Info: PD - 95009 IRFP254PbF • Lead-Free 1 IRFP254PbF 2 IRFP254PbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1

Contextual Info: PD - 95009 IRFP254PbF • Lead-Free www.irf.com 1 2/12/04 IRFP254PbF 2 www.irf.com IRFP254PbF www.irf.com 3 IRFP254PbF 4 www.irf.com IRFP254PbF www.irf.com 5 IRFP254PbF 6 www.irf.com IRFP254PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

Contextual Info: PD - 95009 IRFP254PbF • Lead-Free Document Number: 91214 2/12/04 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214

Contextual Info: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V

Contextual Info: IRFP254_RC, SiHFP254_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V

ZJ DIODE

Abstract: D 92 M - 03 DIODE IRFP254 140534
Contextual Info: IRFP254 Ü S Rectifier HEXFET Power M O S F E T • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements bSE D V DSS = 2 5 0 V

Contextual Info: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFP254A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS= 250V

Contextual Info: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP55

Abstract: IRFP256 IRFP255 IRFP551 IRFP254 IRFP257 TG-247 mosfet irfp 250 N
Contextual Info: Rugged Power MOSFETs File Num ber 2289 IRFP254, IRFP255 IRFP256, IRFP257 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDston = 0.14 O and 0.17 Cl N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

Contextual Info: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ

Contextual Info: IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRFP254A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFP254A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 25 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

IRFP256

Abstract: H30E2 IRFP 620 irfp254
Contextual Info: H30E271 0054210 E7T • HAS H a r r is IRFP254, IRFP255 IRFP256, IRFP257 N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 19 9 1 Features Package TO-247 TOP VIEW • 21A and 23A, 250V and 275V • rDS on = 0.14 i l and 0 .1 7ft • Single Pulse Avalanche Energy Rated

Contextual Info: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole