TSHG8400 Search Results
TSHG8400 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSHG8400 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 5MM HI SPEED 830NM | Original | 5 |
TSHG8400 Price and Stock
Vishay Intertechnologies TSHG8400830 NM, GAAIAS DOUBLE HETERO, HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 830nm |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TSHG8400 | 4,000 |
|
Get Quote | |||||||
TSHG8400 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TSHG8400Contextual Info: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 830 nm High reliability |
Original |
tshg84002002/95/ec2002/96/ec18-jul-08 | |
|
Contextual Info: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 830 nm High reliability |
Original |
tshg84002002/95/ec2002/96/ec11-mar-11 | |
TSHG8400Contextual Info: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 830 nm • High reliability • High radiant power |
Original |
tshg84002002lectual18-jul-08 | |
|
Contextual Info: TSHG8400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 830 nm • • • • High reliability |
Original |
tshg84002002/95/ec2002/96/ec11-mar-11 | |
TSHG8400
Abstract: 08MAR06
|
Original |
tshg84002002/ed08-apr-0508mar06 | |
|
Contextual Info: TSHG8400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 830 nm • • • • High reliability |
Original |
tshg84002002/95/ec2002/96/ec2011/65/eu+1 | |
|
Contextual Info: TSHG8400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 830 nm • • • • High reliability |
Original |
tshg84002002/95/ec2002/96/ec2011/65/eu+1 | |
TSHG8400Contextual Info: TSHG8400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 830 nm • High reliability • High radiant power |
Original |
tshg84002002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: Not for New Design TSOP35D25 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with |
Original |
tsop35d252002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES |
Original |
vsmy3850tshg8200tshg5510vsmy7850x01+6 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
Original |
vmn-ms6520-1311tssp4038 | |
|
Contextual Info: TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce |
Original |
tsop35d26cea-203811-mar-11 | |
|
Contextual Info: TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to proposed CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce |
Original |
tsop35d26cea-20382011/65/eu2002/95/ec+1 | |
82385Contextual Info: Not for New Design - Alternative Available: New TSOP6321 #82432 TSOP5321 www.vishay.com Vishay Semiconductors IR Receiver for Synchronizing of 3D Goggles FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 21 kHz IR signals |
Original |
tsop6321tsop53212011/65/eu2002/95/ec+2 | |
|
|
|||
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
|
Original |
element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
TSHG8400
Abstract: TSOP35D25 10klux
|
Original |
tsop35d252002/95/ec11-mar-11tshg8400+1 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
|
Original |
emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
82385Contextual Info: Not for New Design TSOP5321 www.vishay.com Vishay Semiconductors IR Receiver for Synchronizing of 3D Goggles FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 21 kHz IR signals • Shielding against EMI |
Original |
tsop53212011/65/eu2002/96/ec2002/95/ec+2 | |
|
Contextual Info: TSOP35D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm |
Original |
tsop35d252002/95/ec2002/96/ec2011/65/eu+1 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
|
Original |
vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
CEA-2038Contextual Info: TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to proposed CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce |
Original |
tsop35d26cea-20382002/95/ec2011/65/eu+2 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
|
Original |
11-sep-08diode sr 360iec 6247160825-1+7 | |
|
Contextual Info: Not for New Design TSOP35D26 www.vishay.com Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Compliant to proposed CEA-2038 for long command encoding • Command driven IR synchronized active eyewear standard • Center frequency at 26.2 kHz to reduce |
Original |
tsop35d26cea-20382002/95/ec2011/65/eu+2 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
|
Original |
vmn-ms6520-1012sensor bpw34 application notetouch sensitive siren using transistortsop sensor+7 | |