TSFF5510 Search Results
TSFF5510 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSFF5510 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH SPEED 870NM 5MM | Original | 5 | |||
| TSFF5510 | Vishay Siliconix | High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero | Original | 105.6KB | 6 |
TSFF5510 Price and Stock
Vishay Intertechnologies TSFF5510Module 870nm 2-Pin T-1 3/4 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TSFF5510 | 60 |
|
Get Quote | |||||||
| TSFF5510 | 21 | 1 |
|
Buy Now | |||||||
|
TSFF5510 | 16 |
|
Buy Now | |||||||
TSFF5510 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • 21061 Package type: leaded Dimensions: T-1¾ ∅ 5 mm Peak wavelength: λp = 870 nm High reliability |
Original |
tsff55102002/95/ec2002/96/ec08-apr-05 | |
TSFF5510Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and |
Original |
tsff551018-jul-08 | |
|
Contextual Info: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm |
Original |
tsff55102002/95/trademarks2011/65/eu2002/95/ec+1 | |
|
Contextual Info: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm |
Original |
tsff55102002/95/l2002/95/ec2011/65/eu+2 | |
TSFF5510Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
Original |
tsff55102002/95/ec2002/96/ec11-mar-11 | |
TSFF5510Contextual Info: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package. |
Original |
tsff55102002/95/ec2002/96/ec08-apr-05 | |
|
Contextual Info: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm |
Original |
tsff55102002/95/ec2002/96/ec11-mar-11 | |
TSFF5510
Abstract: sr235
|
Original |
tsff55102002/95/ec2002/96/ec18-jul-08+1 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES |
Original |
vsmy3850tshg8200tshg5510vsmy7850x01+6 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
Original |
vmn-ms6520-1311tssp4038 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
|
Original |
element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
|
Original |
vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
|
Original |
vmn-ms6520-1012sensor bpw34 application notetouch sensitive siren using transistortsop sensor+7 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
|
Original |
vmn-sg2123-1010tsus3400vcnl4000vishay vslb3940 datasheet+7 | |
|
|
|||
A 69157 scr
Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
|
Original |
74k514574k514474k514674k5147+16 | |
TSHG8200
Abstract: CCTV infrared VSMY1850
|
Original |
vmn-pt0211-1101tshg8200cctv infraredvsmy1850 | |
sensor BPW34 application note
Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
|
Original |
vmn-ms6520-1201sensor bpw34 application notecea-2038tsop4438+7 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g |
Original |
vcnl4020x01vcnl3020aec-q101vcnl4010+2 | |
|
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ |
Original |
vmn-sg2180-1305 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors |
Original |
vcnl4010vcnl4020vcnl3020vmn-sg2123-1404 | |
Eye SafetyContextual Info: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws |
Original |
22-jan-15eye safety | |