TP12N Search Results

ltg 551

Abstract: 221A-04 MTM12N05 MTP12N05 MTP12N06 X48V
Contextual Info: MOTOROLA SC XSTRS/R F 1 4 E- D I b3b7ES4 a O TG O MT 3 I - r - 3 9 - / 1 MOTOROLA m SEM IC O N D U C TO R TECHNICAL DATA M TM 12N05 M TP12N 05 MTP12IM06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilic o n G ate TM O S

12N05

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12N 05 M TP12N 05 M TP12N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W E R FETs 12 A M P E R E S T he se T M O S P o w e r F E T s are d e sig n e d for lo w voltage, high

Contextual Info: MOTOROLA O rder this docum ent by M TP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N06EZL TMOS E -F E T ™ High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

schematic diagram UPS

Abstract: STP12NR20 STP12NR20FI
Contextual Info: SGS-THOMSON [MOigœilLiera *® TP12NR20 TP12NR20FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE TP12NR20 S TP12N R20FI • . . . . V dss R d S o ii Id 200 V 200 V < 0 .3 Q. < 0 .3 il 12 A 7 A TYPICAL RDS(on) = 0.23 £1

TP12N

Contextual Info: MOTOROLA O rder this docum ent by M TP12N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N10E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

G12N60b3

Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
Contextual Info: in t e TP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The TP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

TER22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

tdr22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TDR15

Abstract: TD18N TD68N TP82N TP68N
Contextual Info: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:

KL731H

Abstract: TP33N KL731E
Contextual Info: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

AN918 MOTOROLA

Abstract: AN918 Paralleling Power MOSFETs in Switching Applications MTP12N10 2N10E AN-918 MTP8N18 AN918 AN-918 Paralleling Power MOSFETs in Switching Applications Nippon capacitors Motorola AN918
Contextual Info: ^ AN-918 M O TO R O LA Semiconductor Products Inc. Application Note PARALLELING POWER MOSFETs IN SWITCHING APPLICATIONS by Kim Gauen This article updates and supplements the present TDT series of Motorola Applications Notes w ith a more detailed analysis end design guide for TMOS power MOSFET parallel

Contextual Info: • ■A AP PP PLLIIC CA ATTIIO ON N Low profile, high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ ■ FFE EA ATTU UR RE ES S RoHS Compliant. Super low resistance ,ultra high current rating

mlvtp12n2r2

Abstract: MLV-TP12N2R2N-O1 MLV-TP12N1R5N-O1 MLV-TP12
Contextual Info: • PP ICATION ■A AP PLLICATION Low profile , high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ EATURES ■ FFEATURES RoHS Compliant. Super low resistance ,ultra high current rating

irf630

Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Contextual Info: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ TP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

MTP12N20

Abstract: Transistor 3-354 AN569
Contextual Info: MOTOROLA SC XSTRS/R bf l E F b3b?2S4 » GCHf l V1!? W MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP12N20 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS<on) = 0.35 OHM 200 VOLTS This TM O S Power FET is designed for medium voltage, high

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.