TP1220 Search Results

BSS92

Abstract: TP1220L TP2020L VP2020L TP/VP2020L
Contextual Info: TP1220L, TP/VP2020L, BSS92 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L -120 20 @ VGS = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGS = -4.5 V -1 to -2.4 -0.12

TP2020L

Abstract: bss92 VP2020L TP1220L
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

BSS92

Abstract: TP2020L TP1220L VP2020L
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

TP2020L

Abstract: VP2020L BSS92 TP1220L TF1725
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V

Contextual Info: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V

vp2020l

Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP1220L –120 20 @ VGS = –4.5 V –1 to –2.4 –0.12 TP2020L –200 20 @ VGS = –4.5 V –1 to –2.4

Contextual Info: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)

Contextual Info: TP1220 Plug-In Transformer Rev. TP1220_11152012 Overview TP1220 transformer provides 12VAC with a total of 1.7 amp output current. TP1220 Specifications Electrical cont’d : Input: •฀ 115VAC 50/60 Hz, 0.23 amp. Output: •฀ 10.44฀BTU/Hr. •฀ System฀AC฀input฀VA฀requirement:฀26.45VA.

BSS92

Abstract: p-channel mosfet bss92
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) TP1220L -1 2 0 20 @ VGs = - 4 .5 V - I to - 2 .4 -0 .1 2 TP2020L -2 0 0 20 @ V Gs = - 4 5 V -1 to -2 .4 -0 .1 2 VP2020L -2 0 0 20 @ V GS = -4 .5 V

Contextual Info: T em ic TP1220L, TP/VP2020L, BSS92_ sì„conix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V BR DSS M in (V) r DS(on) M ax (£2) VGS(lh) (V) I d (A) TP1220L -1 2 0 20 @ V GS = -4 .5 V —1 to -2 .4 -0 .1 2 TP2020L -2 0 0

TP2020L

Contextual Info: TP1220L, TP2020L P-Channel Enhancement-Mode MOS Transistors_ _ PRODUCT SUMMARY TO-92 TO-226AA V(BR)DSS PART NUMBER rDS<ON) (Ù ) •d (A) TP1220L -120 20 -0.12 TP2020L -200 20 -0.12 BOTTOM VIEW (tT ? ) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VPDQ20

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

ST T4 D560

Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom

CTX5-4

Abstract: sm 0038 Coiltronics VP1-0076 ctx12 VP4-0140 Coiltronics up4-680 1052l CTX2-4p COILTRONICS CTX33-3 CTX5-1P
Contextual Info: INDUCTOR SELECTION GUIDE COILTRONICS Coiltronics Inc. PART Number TP1-R47 TP2-R47 TP3-R47 TP4-R47 CTX0.47-1 CTX0.47-1P CTX0.47-2P UP1B-R47 CTX0.47-3 CTX0.47-3P CTX0.47-2 CTX0.47-4 CTX0.47-4P UP2-R47 UP2B-R47 UP3B-R47 UP4-R47 CTX0.68-1 CTX0.68-3 CTX0.68-1P

TP2330

Abstract: TP4-100 TP2-330 TP4-2R2 tp1-220
Contextual Info: INCORPORATED THIN-PAC THIN-PAC TM GENERAL THIN-PACs are extremely thin, highly efficient surface mount inductors specifically designed for applications where physical size, especially component height, is critical. With heights as low as 1.8 mm, THIN-PACs offer circuit design engineers a choice of

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

FET package TO-71

Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
Contextual Info: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25

TP1230

Abstract: SOCK-30P-2R-SMD-MNT 88E8040 U5025 218S6ECLA21FG ICS951461 TP1319 tp1217 DTP60-8 TP1322
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D XI’AN g n l u a s i t m www.kythuatvitinh.com

AES2501

Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

TPK01-13692

Abstract: TP3-100 TP3100 TP2330 TP4-6R8
Contextual Info: INCORPORATED THIN-PAC THIN-PAC TM GENERAL THIN-PACs are extremely thin, highly efficient surface mount inductors specifically designed for applications where physical size, especially component height, is critical. With heights as low as 1.8 mm, THIN-PACs offer circuit design engineers a choice of

b712 smd

Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
Contextual Info: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood

Contextual Info: THIU-PAC' GENERAL THIN-PACs are extremely thin, highly efficient surface mount inductors specifically designed for applications where physical size, especially component height, is critical. With heights as low as 1.8 mm, THIN-PACs offer circuit design engineers a choice of

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2