T3909 Search Results

Contextual Info: T3909 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

D0447

Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

k 246 transistor fet

Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
Contextual Info: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

TTPC

Abstract: BUK474-500B rm3 transistor BUK474
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies

D4MB

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

rm3 transistor

Abstract: BUK478
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

LP2S

Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode

2N6794

Contextual Info: SEMELAB LTD 37E D • Û1331Ô7 GOODBll fl J AN 0 5 1988 <y\ 1 SEMELAB 2N 6793 2N 6794 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 ìi APPLICATIONS T • FAST SWITCHING 8.5 max. 1 • MOTOR CONTROLS k - 5 .H • POWER SUPPLIES

Contextual Info: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

NDS 40-20

Abstract: NDS 40-30 BUK442 BUK442-50A BUK442-50B 00E0333
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • ^53131 0020330 0 ■ P o w erM O S tra n s isto r B U K 442-50A B U K 442-50B T - 3 < ? - o <7 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

DD 127 D TRANSISTOR

Abstract: BUK443-50B BUK443 BUK443-50A TRANSISTOR K 135 J 50
Contextual Info: N AMER PHIL IP S/D ISCRETE 2SE D ^53^31 G0E0345 2 PowerMOS transistor BUK443-50A BUK443-50B T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

k54160a

Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack

BUK545-50A

Abstract: BUK545 BUK545-50B
Contextual Info: N AMER PH IL IP S/ DISCR ET E 5SE D fc>h53T31 DDEOSTQ 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r -3 7 -,3 < 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

buk539

Abstract: BUK539-60 539-60A BUK539-60A Philips BUK 100
Contextual Info: T ï -Z > 9 -Æ Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK539-60A PowerMOS transìstor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

t3901

Contextual Info: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded DESCRIPTION This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30

T3910

Contextual Info: *T03 CASE RECTIFIERS DUAL AND SINGLE CHIP l0 RATINGS TO 30.0 AMPERES (HIGH SPEED) FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose medium current rec­ tifiers with average forward current ratings of up to 30

SFN106B9

Abstract: DS0026 IRFF121 3909
Contextual Info: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology

sfnf105

Contextual Info: 8368 6 0 2 S O L I T R O N D E V I C E S SFNF105D INC 70C 0 2002 SWITCH MOS 7D PACKAGE TO-39 TJ oper T „ stg ^SS r d s (on) Voltage, Gate-to-Source Power Dissipation @ Tc»25°C Junction Operating Temperature 16 -55 to +150 Storage Temperature -55 to +150

Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in

BUK475-400B

Abstract: LD25C BUK475 3909
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE D i- 1 GENERAL DESCRIPTION N-channel enhancem ent m ode

k446

Abstract: transistor k446 BUK446 BUK446-1000A BUK446-1000B
Contextual Info: P H IL IP S INTERNATIONAL Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in