SIS892ADN Search Results
SIS892ADN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIS892ADN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 28A PPAK 1212 | Original | 13 |
SIS892ADN Price and Stock
Vishay Intertechnologies SIS892ADN-T1-GE3Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3 | 6,000 | 3,000 |
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| SIS892ADN-T1-GE3 | 2,839 | 58 |
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| SIS892ADN-T1-GE3 | 1,580 | 14 |
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SIS892ADN-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIS892ADN-T1-GE3 | 6,000 | 52 Weeks | 3,000 |
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| SIS892ADN-T1-GE3 | Cut Strips | 1,580 | 52 Weeks | 1 |
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SIS892ADN-T1-GE3 | Tape & Reel | 10,941 | 100 |
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| SIS892ADN-T1-GE3 | Cut Tape | 10,941 | 1 |
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| SIS892ADN-T1-GE3 | Tape & Reel | 3,000 |
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| SIS892ADN-T1-GE3 | Cut Tape | 1 |
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SIS892ADN-T1-GE3 | Reel | 3,000 |
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SIS892ADN-T1-GE3 | 2,839 | 1 |
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SIS892ADN-T1-GE3 | 6,000 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SIS892ADN-T1-GE3.MOSFETs PWRPK 100V 28A N-CH MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3. | Cut Tape | 2,690 | 10 |
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Vishay Siliconix SIS892ADN-T1-GE3IN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3 | 2 |
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Vishay Huntington SIS892ADN-T1-GE3Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 T/R / MOSFET N-CH 100V 28A PPAK 1212 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS892ADN-T1-GE3 | 25,000 |
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Buy Now | |||||||
SIS892ADN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiS892ADN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sis892adn2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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sis892adn2002/95/ec2011/65/eujs709a+1 | |
SiS892ADNContextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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sis892adnsis892adn-t1-ge32011/65/eu2002/95/ec+1 | |
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Contextual Info: SiS892ADN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.033 at VGS = 10 V 28 0.036 at VGS = 7.5 V 26.8 0.047 at VGS = 4.5 V 23.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested |
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sis892adn2002/95/ec2011/65/eujs709a+1 | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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sc-70sc-75si7252dpvmn-pt0261-1209+9 | |
Full MaterialContextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙) AMS(航空、 衛星/GPS 4 |
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siz710dttop-10sir662dpcny64st+5 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4 |
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siz710dttop-10sir662dpcny64st+4 |