SIJ482DP Search Results

Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

SIJ482DP

Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

63728

Abstract: SIJ482DP
Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

WE 1688

Contextual Info: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SiJ482DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in