SI7902EDN Search Results

Si7902EDN

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 8.3 0.030 @ VGS = 3.7 V 8.0 0.043 @ VGS = 2.5 V 6.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr

Si7902EDN

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Si7902EDN

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 @ VGS = 4.5 V 8.3 0.030 @ VGS = 3.7 V 8.0 0.043 @ VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 @ VGS = 4.5 V 8.3 0.030 @ VGS = 3.7 V 8.0 0.043 @ VGS = 2.5 V 6.7 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Si7902EDN

Contextual Info: Si7902EDN Preliminary Information Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 8.3 0.030 @ VGS = 3.7 V 8.0 0.043 @ VGS = 2.5 V 6.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt

Si7902EDN

Contextual Info: SPICE Device Model Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7902EDN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 8.3 0.030 at VGS = 3.7 V 8.0 0.043 at VGS = 2.5 V 6.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no