SVC201SPA Search Results

Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

FUH -29A001B

Abstract: FUH -29A001F GVC2013PA SVC201SPA
Contextual Info: PutiHpig FKinHnr B j g H j l SVC201SPA, 201 y D u llu ie d J u n c tio n s Tvpw 5 il llç u ii f r o d o Varactor Diode {IOC AP for FM Receiver Electronic Tuning / / Features Package Dimensions Itic 5 V C 2 0 IÍP A . 2 0 ! Y aal vlii «hiciücs a ttu tii j m ieli <m s ir ^ im e ftb ric fljò f) * i ' l i hm mìplim

SVC201SPA

Abstract: C75V CM 3171
Contextual Info: 注文コード No. N 5 0 1 I SVC201SPA No. N 5 0 1 I 20501 * 半導体ニューズ No.501H とさしかえてください。 SVC201SPA 特長 拡散接合形シリコンダイオード 可変容量ダイオード（IOCAP）FM 受信機電子同調用 SVC201SPA は FM 受信機の電子同調用として設計されたイオン注入法による超階段型接合構造の可変容量

ENN501I

Abstract: SVC201SPA
Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

kt 501

Abstract: SVC201SPA SVC201Y "FM receiver"
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

SVC303

Abstract: BQ 6100 SVC251 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - & s ND3048-5E ND3049— 3D ND3049-5E ND3050-3D ND30S0-5E N D31 3 6 1 -3D ND3138(1)-5B ND3138(2)-3D ND3138(2)-5E SVC201SPA # « mm sn Bis nn an hn Bn * * £ ft Vr m Vr (m W) (V) (V) P mm £1* « Ÿ B B M Ct. Cj* (pF) nin typ max typ max VI (V) V2 (V) 50

transistor B 1184

Abstract: SVC201SPA SVC201Y "FM receiver" varactor diode fm
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

lm 3298

Abstract: LM 3171 lm 1628 NS501 um 3567 LM 1709 1565R 1201 varactor 3745L
Contextual Info: O rdering num ber : EN501H SVC201SPA.201Y N0.5OIH Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning M F e a tu re s The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM receiver electronic tuning applications.

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

1271a

Abstract: P 1271A ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y SVC202
Contextual Info: - & s ND3048-5E ND3049— 3D ND3049-5E ND3050-3D ND30S0-5E N D31 3 6 1 -3D # « mm * * £ ft Vr m Vr (m W) (V) (V) P Tan 200 25 0. 7 Bis 200 25 4.0 Tun 200 25 Tun 200 Tun max V r (V) min typ max VI (V) V2 (V) 50 6 50 0. 23 6 6 50 0. 6 6 50 0. 6 6 6 50 0.

BQ 6100

Abstract: svc203cp SVC303 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - & s # « mm sn * *£ P m W «ŸBBM ft Vr m Vr (V) (V) mm £1* Ct. C j * (pF) nin typ max gs.tk Q min V r (V) mi n typ max VI (V) V2 (V) <Q) & Umax $ V r (V) f (MHz) - n f d max Ct(Vl)/Ct(V2) 199 (UA) V r (V) ND3048-5E Tan 200 25 0. 7 1.1 1. 5 8 25 50 0. 1

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

murata cfw455f

Abstract: cfw455f CFW455 IF2E EN4930 yd1002 LA8670M 1st IF 45 MHz, 2nd IF 455
Contextual Info: Ordering number: EN4930 Monolithic Linear 1C LA8670M N o .4930 SAMYO Double-Conversion Narrow-Band FM IF System ¡ Overview Package Dimensions The LA8670M is a narrow band FM IF system for use in com m unication equipm ent. In addition to the functions required for FM reception, the LA8670M provides a rich

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

CFWS455F

Abstract: ILV00150 ILV00151 LV2210V SSOP24 cfws455d
Contextual Info: Ordering number : ENN7028 Bi-CMOS IC LV2210V Basic Data Communication Receiver IC Overview Package Dimensions The LV2210V is a basic data communication receiver IC that integrates on a single chip a frequency synthesizer that can be controlled by serial data, a downconverter