|
Contextual Info: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20
|
OCR Scan
|
sup/sub65p06-20t0-220abo-263sup65p06-20+3sub65p06-20p-39628--rev28-dec-94
|
PDF
|
sup65p06
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
sup/sub65p06-20o-220abo-263sub65p06-20+4sup65p06-20s-57253--rev24-feb-98sup65p06
|
PDF
|
sup65p06
Abstract: 0244 9117 AN609 SUP65P06-20
Contextual Info: SUP65P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
sup65p06-20an60903-jan-08sup65p06+202449117
|
PDF
|
SUB65P06-20
Abstract: SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
sup/sub65p06-20o-220abo-263sub65p06-20+1sup65p06-20
|
PDF
|
sup65p06
Abstract: SUB65P06-20 SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
sup/sub65p06-20o-220abo-263sub65p06-20+3sup65p06-2018-jul-08sup65p06
|
PDF
|
sub65p06-20
Abstract: SUB65P06 SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
|
Original
|
sup/sub65p06-20o220absub65p0620sup65p0620+7o-220abo-263p-39628--rev28-dec-94sub65p06-20sub65p06sup65p06
|
PDF
|
SUB65P06-20
Abstract: SUP65P06-20
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
sup/sub65p06-20o-220abo-263sub65p06-20+2sup65p06-2008-apr-05
|
PDF
|
S0511
Abstract: sup65p06 SUB65P06-20 SUP65P06-20 sub65p06
Contextual Info: SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
|
Original
|
sup/sub65p06-20o-220abo-263sub65p06-20+6sup65p06-20s-05111--rev10-dec-01s0511sup65p06sub65p06
|
PDF
|
SUB65P06
Abstract: SUP65P06
Contextual Info: SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06Ć20 Top View PĆChannel MOSFET SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
|
Original
|
sup/sub65p06-20o220absub65p0620sup65p0620+6o-220abo-263p-39628--rev28-dec-94sub65p06sup65p06
|
PDF
|
SUB65P06-20
Contextual Info: SUP/SUB65P06-20 Siliconix P-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –60 0.020 –65a TOĆ220AB S TOĆ263 G DRAIN connected to TAB GD S G D S Top View Top View D PĆChannel MOSFET SUB65P06Ć20 SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
|
Original
|
sup/sub65p06-20o220absup65p0620sub65p0620+5o-220abo-263s-57253--rev24-feb-98sub65p06-20
|
PDF
|
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
|
Original
|
gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2
|
PDF
|
T0252
Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)
|
OCR Scan
|
smb60n03-10lsmp60n03-10lsmd30n03-30lsmu30n03-30l+16sud30n03-30sud50n03-10sub75n05-06sup75n05-06sud45n05-20lsmd25n05-45lt0252sup75no8-i0sup60n06-18d-pakd2paksmp40p06t026370220absmd10p05t0-251
|
PDF
|
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
|
Original
|
si4831dysi4833dysi4852dysi4816dy+1410singlevn50300lvn50300tot-23vn66afdvn10klsmosfet bs250si4730sup85n03-04psi4835dysi5504si3459dvsup65p06sub75p05
|
PDF
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
|
PDF
|
|
|
TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
|
Original
|
wn1053wn1087-18rwn1087-tr1wn1090+16wn1125wn1142wn1158-tawn1165-tr1wn1170wn934temic k153ptshf5471tfmw5380dn1328tdsr5156dn904tdsr5153hs0038 ir sensortlvd4900tcdf1910
|
PDF
|
JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
|
Original
|
u3750bmu3760mb-fnu3760mb-sdsso-44+14sd-40u3800bmu3810bmu4030bjfet transistor replacement guide j201ua6538dc motor speed control using 555 and ir sensoru2740b-fpuaa145cqy80u2840btcrt9050tcdf1910sod80 smd zener diode color band
|
PDF
|