ST93CS57 Search Results

A10089

Abstract: ST93CS56 ST93CS57
Contextual Info: r= 7 ^ 7 # ST93CS56 ST93CS57 S G S -T H O M S O N • » M ilL Itg T ïïiS tM Q tg S SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM - 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION • SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

ST93CS56

Abstract: ST93CS57
Contextual Info: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57

Contextual Info: ST93CS56 ST93CS57 SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE

Contextual Info: fZ J * 7 /* S G S -T H O M S O N 5 [UgMDSlDlgi ST93CS57 2.5V SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Contextual Info: Æ T *7 Æ , S C S -ÌH O M S O N M g » l(g m Q i]0 (g S ST93CS57 2.5V SERIAL ACCESS CMOS 2K bit (128 x 16) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 2.5V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

M93S56

Abstract: ST93CS56 ST93CS57
Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: ST93CS56 ST93CS57 ¿ = 7 SGS-THOMSON SERIAL ACCESS CMOS 2K bit 128 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­ MING ■ SINGLE SUPPLY VOLTAGE

Contextual Info: SGS'THOMSON ST93CS56 ST93CS57 IM H S ls i(S [g n ll(S T O (ô )lM H (S g SERIAL MICROWIRE BUS 2K (128 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: r Z Z SGS-THOMSON ST93CS57 s 2 K BITS 128 x 16 SERIAL ACCESS CMOS EEPROM MEMORY • 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES ■ USER DEFINED SIZE OF A MEMORY SEC­ TION PROTECTED AGAINST WRITE. ■ WORD AND PAGE WRITE MODES. ■ HIGHLY INCREASED RELIABILITY OF CMOS

Contextual Info: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: / T T SGS-THOMSON ^ 7 # . llD g ®llLI TO(s lfSlD(gi ST93CS56 ST93CS57 • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING ■ SINGLE SUPPLY VOLTAGE - 3V to 5.5V for the ST93CS56

Contextual Info: /= T *7 # , ST93CS56 ST93CS57 S G S -T H O M S O N HD § [l[Li®ra®lii!lD gS SERIAL ACCESS MICROWIRE BUS 2K (128 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

7W53

Abstract: FZJ 101 AIO0387 ST93CS56 ST93CS57 G72077 AI008
Contextual Info: ¿ = 7 S C S -T H O M S O N * 7 E a D @ [lÔ ilL i ® liD ( g i 1 , ST93CS56 ST93CS57 SERIAL ACCESS MICROWIRE BUS 2K (128x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

64X16 led matrix

Abstract: TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SG S-THOMSON DATABOOKS DB O RDER CODE a 4 BIT MCU FAMILY ET9400 DBET9400ST/1

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

atmel 93C46

Abstract: 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel
Contextual Info: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the

EPROM

Abstract: M87C512 m27c256 UV EPROM ET2716
Contextual Info: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

PSO14

Contextual Info: rz 7 A 7 l S G S -T H O M S O N ö ttJ ü in fä M tg ! ST93C S57 2 K BITS 128 x 16 SERIAL ACCESS CMOS EEPROM MEMORY • 2.5V - 5.5V SINGLE POWER SUPPLY IN ALL MODES . USER DEFINED SIZE OF A MEMORY SEC ­ TION PROTECTED AGAINST WRITE. . WORD AND PAGE WRITE MODES.