ST93C Search Results

NM93C46ZEN

Abstract: atmel 93c66 24C04BT-ISN atmel 93C46 24c04af 93C76 seiko TM601
Contextual Info: Cross Reference Guide MEMORY SIZE 1Kb 2Kb SEIKO INSTRUMENTS NSC ATMEL SGS THOMSON MICRO CHIP S-29130ADPA NM93C S 46ZEN AT93C46-10PI-2.5 ST93C46(7)AB6 93C46-IP S-29130AFJ A-TB NM93C(S)46ZEM8 AT93C46R-10SI-2.5 ST93C46(7)TM6013TR 93C46XT-ISN AT93C46W-1 OSI-2.5

Contextual Info: Æ 7 ^ 7 # S G S -T H O M S O N ST93CS46 R iflD ® © I[ L I O T ® E O D © Ì SERIAL A C C E S S C M O S 1K bit (64 x 16 EEPR O M • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ SINGLE 3V TO 5.5V SUPPLY VOLTAGE ■ USER DEFINED WRITE PROTECT AREA

Contextual Info: / Z T SGS-THOMSON *7#» »»IUI !! «©® ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 128 x 16 or 256 x 8 ■ BYTE/WORD and ENTIRE MEMORY

VA00874

Contextual Info: ST93C46A ST93C46T SGS-THOMSON ^ 7 # llü [E } Q i[ L i( ê ¥ [] 3 @ [* S SERIAL ACCESS CMOS 1K bit (64 x 16 or 128 x 8) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ DUAL ORGANISATION: 6 4 x 1 6 or 1 2 8 x 8

Contextual Info: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: Æ Ä T T# S G S -T H O M S O N ST93C06 H D [^ @ [1 [L [I© ¥ ^ ® R Ì]D © Ì SERIAL ACCESS CMOS 256 bit 16 x 16 or 32 x 8 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION « DUAL ORGANISATION: 16 x 16 or 32 x 8

T93C46A

Contextual Info: SGS-THOMSON ST93C46A M 1 KBITS 64x16 or 128x8 SERIAL ACCESS CMOS EEPROM MEMORY PRELIMINARY DATA HIG HLY INCREASED RELIABILITY OF CMOS EEPROM TECHNOLOGY. OVER 1 M ILLION ERASE/WRITE CYCLES. OVER 10 YEARS DATA RETENTION. 64 X 16 OR 128 X 8 M EMORY FORMAT USER

FZJ 101

Abstract: ST93CS46 ST93CS47
Contextual Info: S G S -T H O M S O N « (g lia m itg m iM IK g t ST93C S46 ST93C S47 SERIAL MICROWIRE BUS 1 K( 6 4 x 16 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

ST93CS66

Abstract: ST93CS67 st93CS66M1 but options mqs
Contextual Info: ST93CS66 ST93CS67 S G S -1 H 0 M S 0 N M [M ilLI gïï[i3©K3D(i§ SERIAL MICROWIRE BUS 4K (256 x 16) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAMMING

A10089

Abstract: ST93CS56 ST93CS57
Contextual Info: r= 7 ^ 7 # ST93CS56 ST93CS57 S G S -T H O M S O N • » M ilL Itg T ïïiS tM Q tg S SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM - 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION • SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

ST93C66

Contextual Info: SGS-THOMSON ST93C66 • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING

Contextual Info: ST93CS56 ST93CS57 2K 128 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56

Contextual Info: ST93CS46 ST93CS47 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46

VA00874

Abstract: ST9306A
Contextual Info: r= J *T Æ ST93C46A ST93C46T S C S -TH O M S O N H D g [Ë ] i[L i(g î® (ô R ÎD (g i SERIAL ACCESS CMOS 1K bit (64 x 16 or 128 x 8) EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ DUAL ORGANISATION: 64 x 16 or 128 x 8

Contextual Info: /= T S G S -T H O M S O N ^ 7 # [* ^ S i ¥ K (Q M (g S ST93CS46 ST93CS47 SERIAL ACCESS CMOS 1K bit (64 x 16 EEPROM • MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE ■ READY/BUSY SIGNAL DURING PROGRAM­

Contextual Info: rZ J S C S -T H O M S O N ST93C66 ^ 7# . IM g[M [lQJi(g¥K(ôM(gS SERIAL ACCESS CMOS 4K bit (256 x 16 or 512 x 8) EEPROM - MINIMUM 1 MILLION ERASE/WRITE CYCLES, with OVER 10 YEARS DATA RETENTION - DUAL ORGANIZATION: 256x 16 or 5 1 2 x 8 - BYTE/WORD and ENTIRE MEMORY PRO­

diode 56c

Abstract: ST93C56 ST93C57C
Contextual Info: ST93C56, 56C ST93C57C SERIAL MICROWIRE BUS 2K 128 x 16 or 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93CS46

Abstract: ST93CS47
Contextual Info: ST93CS46 ST93CS47 SERIAL MICROWIRE BUS 1K 64 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47

ST93C06C

Abstract: M93C06 ST93C06
Contextual Info: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

M93C56

Abstract: ST93C56 ST93C56C ST93C57C
Contextual Info: ST93C56, 56C ST93C57C 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 128 x 16 or 256 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: ST93CS46 ST93CS47 SGS-THOMSON IIIIMJì ILIìMWIIÈÌ 1K 64 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE

ST93C06

Abstract: ST93C06C AI00816B
Contextual Info: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93CS56

Abstract: ST93CS57
Contextual Info: ST93CS56 ST93CS57 SERIAL MICROWIRE BUS 2K 128 x 16 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE – 3V to 5.5V for the ST93CS56 – 2.5V to 5.5V for the ST93CS57

Contextual Info: ST93CS66 ST93CS67 SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4K 256 x 16 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING