SFT102 Search Results

Contextual Info: SOLID STATE DEVICES INC 1EE D Jfi3bbDll □ □□SD'H 1 | Preliminary Data Sheet - 1— SFT102 _ f\q = - SSDI 0.5 A M P H I G H V O L T A G E NPN T R A N S I S T O R 450 V O L T S cz^se: s t y l e t o — 59 ALL TERMINALS ISOLATED FROM CASE 14830 VALLEY VIEW

SFT1016

Abstract: SFT1018 SFT1020
Contextual Info: X o ö i ?>C? SFT1015 SFT1018 10S AMP SFT1020 HIGH ENERGY NPN TRANSISTORS 350 VOLTS C A S E FEATURES S T Y L E TO-3 BVCEQ 160 - 200 VOLTS 300 WATTS POWER DISSIPATION E X C E L L E N T SOA CU RV E Es/b OF 400mJ G A I N OF O V E R 5 A T 100 AM PS HIGH-REL CONSTRUCTION INCLUDING GOLD

25CC

Abstract: SFT102 a316e
Contextual Info: XQ&W3. Preliminary Data Sheet SFT102 SSDI 0.5 AMP H I G H V O L T A G E NPN T R A N S I S T O R 450 V O L T S C A S E S T Y L E T O — 5 9 ALL TERMINALS ISOLATED FROM CASE 14830 VALLEY VIEW LA MIRADA, CA.90638 ; <213 921-9660 TWX 910-583-4807 FAX 213-921-2396

2N5015

Abstract: 2n5095 transistor 2N5 2n5097 2N5010 2N5012 2N5013 SFT102 A316E 2N509
Contextual Info: SOLID STATE DEVICES INC 1 EE D Jfi 3 bbDll □ □□SD'H 1 Preliminary Data Sheet - 1— SFT102 | _ f\q = - SSDI 0.5 A M P H I G H V O L T A G E NPN TRANSISTOR 450 V O L T S cz^se: s t y l e t o — 5 9 ALL TERMINALS ISOLATED FROM CASE 14830 VALLEY VIEW

4BA7

Contextual Info: SOLI» STATE DEVICES INC SFT1016 Preliminary Data SFT1018 S h e e t 12E » |ö3bbDll 0DDE1QS 7 | T-2>3~mr 5FT1020 SSDI 100 A M P G H I G H E N E R G Y NPN T R A N S I S T O R S VCEG 160, 180, C A S E S T Y L E .TO-3 200 ► t k t ► t MAXIMUM RATINGS 14830 VALLEY VIEW

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013

motorola bf758

Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U
Contextual Info: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P

SPT1002

Abstract: B-226 B226S SFT1001 SFT1003 SFT1004 SFT1010 SFT1012 spt100 SOLID STATE INC
Contextual Info: SOLID STATE DEVICES INC 1SE D |fl3bb011 QDQ21D1 T | T - 3 3 - iS ' PRELIMINARY DATA SHEET 5 -8 -8 5 SFT1002 AND SFTÍ004 100 AMP HIGH SPEED NPN TRANSISTOR 250 VOLTS CASE STYLE R FEATURES TO—3 WITH .0 0 0 PINS • • • • • • • • 14830 Valley V iew Avenue

MWA330

Abstract: MWA310 MWA320 CENTRALAB CAPACITOR uk50-104
Contextual Info: MOTOROLA SEMICONDUCTOR MWA310 MWA320 MWA330 TECHNICAL DATA The RF Line WIDEBAND HYBRID AMPLIFIERS DC-1000 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS . . . single stage a m p lifie rs designed fo r broadb and lin e a r a p p lic a tio n s up t o 1 0 0 0 M H z.