SDF504
Abstract: SDF500 SDF501 SDF502 SDF503 SDF505 SDF506 SDF507 SDF508 SDF509
Contextual Info: Vgss BVgss Ciss Crss Type Case off Geometry Min Max Max Number Style Min (V) (pF) (pF) (V) TOFN SDF500 50 8 1.8 1.0 71 39.8 TOFN SDF501 50 8 1.8 1.0 71 39.8 TOFN SDF502 50 8 1.8 1.0 71 39.8 TOFN SDF503 50 8 1.8 1.0 71 39.8 TOFN SDF504 50 8 1.8 1.0 71 39.8
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sdf500sdf501sdf502sdf503+6sdf504sdf505sdf506sdf507sdf508sdf509
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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Contextual Info: ÄTFÄtL LO W P O W E R FIELD EFFECT T R A N S IS T O R S ©HUM, [FUTf! Ida»1/ Ida«2 Match Match % <W) YfiV Type Number Case Style (T O -) Geometry BVgas Min (V) Ciss Max (PF) Vgsa(off) Min Max (V) Ids* Yfa Min Max (mA) Min Max (UMhoe) Yia 2 Yo* Vgs‘
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2n59022n59032n59042n5905+62n59062n59072n59082n59092n59112n5912
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2N3958
Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5
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2n39212n39222n39542n3954a+102n39552n3955asdf506sdf507sdf508sdf5092n39582n39562n39572n4082
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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uc4250uc42500mil-std-883c19s00/+152n7109sdf8200fmn35sdf8201fmnz35sdf8202in5314in5309in52862n51632nb906in5313u1897e2n3456in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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uc4250uc4250cmil-std-883c2n2609+162n38212n38222n38232n48562n48572n48s82nb906in53132nb90in5286in5296solitrondevicesin5302in5287in53062n5902 to-92
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Contextual Info: N -C H A N N E L J U N C T IO N FET CHIP NUMBER m CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 . 020 " 0.508trim Backside Contact: 3,000 A Gold A SSEM BLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40111x109tis88a equivalent2n3456 equivalent+8j411 fet2n5952 equivalent2n3820 equivalent2n5248 equivalentfet 2n43042n5245 equivalent2n4304 equivalent2n5454 equivalent
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Contextual Info: Ä T TÄ tL N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " 0.508mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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508mm381mm0254mmsdf500+52n55152n55242n48672n4868fl3bflb02
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SDF160A1
Abstract: SDF500A1
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 3anMTbie APOCcenM p,nn nenaTHoro MOHTawa C # e p a npMMeHeHMa : npeo6pa30BaienM DC/DC , MMnynbCHbie 6noKM nMTaHMfl, noMexonoflaBrmrow,Me CMCTeMbi n p e flH a 3 H a n e H H A rm n acTO Tbi a o 1 0 0 kT u,.
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npe06pa30batennnpeflh33hahehha06p0th0ctbanana30h+6sdf500a0sdf250a1sdf500a1sdf160a1sdf315a2sdf200a2
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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integrau404lsu405lsu406ls841+15ls842ls421ls422ls423ls424npd5564npd5566bfy91imf39582n3050nf5458fairchild e212mp842j9100sst5638
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2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
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mfe2001mfe2c04mfe2005mfe2006+16mfe2133mpf102mpf108mpf109mpf111mpf1122n43602n3459j411 fetsolitron 2n3821u1898e2n5906tis58mem5112n3920uc451
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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e420 dual jfetac digital voltmeter using 7107mps5010bf320+6jfet bf245 bf246 j201 2n3819mc6821icl7117 voltmetercookbook for ic 555hall marking code a04e304 fet
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2N5515
Abstract: 2N4867 2N4868 2N5524 SDF500
Contextual Info: ^/outran Devices, Inc. [PK ®iyj ST ÂTM,®< N -C H A N N E L J U N C T I O N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.381mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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381mm0254mmsdf5002n5515+32n55242n48672n4868
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