SAC10 Search Results

L-11117

Contextual Info: Transient Voltage Suppressors Microsemi . P artN um ber JAN1N6109A JAN1N6109AUS JANS1N6109A JANS1N6109AUS JANTX1N6109A JANTX1N6109AUS JANTXV1N6109A JANTXV1N6109AUS P5KE10 P5KE10A SA10 SA100C SA36 SA36CA SAB10 SAC10 SMAJ10 SMAJ10A SOV10 TVS510 TVS510SM TGL41-12A

NORTHBRIDGE* reflow

Abstract: pin diagram AMD phenom II - X4 RX980 990FX RD990 ATI RADEON reflow profile RD980 amd RADEON igp 215-0716046 AMD Phenom II x4
Contextual Info: AMD 990FX/990X/970 Databook Technical Reference Manual Rev 3.00 P/N: 48691_990FX_ds_nda 2012 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Phenom, AMD Cool'n'Quiet, and combinations thereof, ATI, the ATI logo, Radeon, and CrossFire are trademarks of Advanced

EFM32WG395

Contextual Info: .the world's most energy friendly microcontrollers EFM32WG395 DATASHEET F256/F128/F64 • ARM Cortex-M4 CPU platform • High Performance 32-bit processor @ up to 48 MHz • DSP instruction support and floating-point unit • Memory Protection Unit • Flexible Energy Management System

EFM32WG390

Contextual Info: .the world's most energy friendly microcontrollers EFM32WG390 DATASHEET F256/F128/F64 • ARM Cortex-M4 CPU platform • High Performance 32-bit processor @ up to 48 MHz • DSP instruction support and floating-point unit • Memory Protection Unit • Flexible Energy Management System

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32LG390 DATASHEET F256/F128/F64 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32LG990 DATASHEET F256/F128/F64 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

Contextual Info: ARM-based Embedded MPU SAMA5D3 Series SUMMARY DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32LG995 DATASHEET F256/F128/F64 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32GG995 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

EFM32GG290

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32GG290 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

Contextual Info: Preliminary .the world's most energy friendly microcontrollers EFM32GG395 DATASHEET F1024/F512 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 48 MHz • Memory Protection Unit • Flexible Energy Management System

transzorb symbol

Abstract: sac5.0 TRANSZORB diode
Contextual Info: SAC5.0 thru SAC50 Series Low Capacitance TRANSZORB Transient Voltage Suppressor Peak Pulse Power 500W Stand-off Voltage 5.0 to 50V DO-204AC DO-15 0.034 (0.86) 0.028 (0.71) DIA. Features 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia.

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4

Contextual Info: SAC5.0 thru SAC75 Transient Voltage Suppressor Breakdown Voltage 5.0 to 75 Volts Peak Pulse Power 500 Watts Features  CASE: DO-204AL DO-41      Breakdown Voltages (VBR) from 5.0 to 75V 500W peak pulse power capability with a 10/1000 s

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SAC10

Abstract: SAC12 SAC15 SAC18 SAC22 SAC26 sac8.5
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com SAC SERIES LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

MT46H64M16

Abstract: 6S55 MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

s11 stopping compound

Abstract: DEF01
Contextual Info: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

D9KG

Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
Contextual Info: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

MT29C1G12

Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Contextual Info: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

24CA/BZ

Abstract: SMBJ11CA BFM 39a IFR 9540 5KE15C 816 6v8a SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA
Contextual Info: TM Micro Commercial Components TRANSIENT VOLTAGE SUPPRESSORS MCC Part Number Uni-Polar Breakdown Voltage VBR @ IT Volt Bi-Polar Min Max Reverse Standoff Voltage Vwm Maximum Reverse Leakage IR @Vwm Maximum Clamping Voltage Vc @ Ipp mA V A V A %/℃ 10.5

09005aef8091e6d1

Abstract: PC133 registered reference design
Contextual Info: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive

Contextual Info: MIL-COTS PFC Front End GP-MPFC1H21 AC Input Front End Module Features • AC input: 102 – 264 V • Wide input frequency range: 47 – 440 Hz • Output power: Up to 1400 W • Input transient protection • Power factor corrected • Rugged construction

MT46H128M16

Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
Contextual Info: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4