S3T31 Search Results

MB8114

Abstract: BF246 BF246A BF247A
Contextual Info: bt,S3T31 n053S0? 552 • APX BF246A to C BF247A to C IM AMER PHILIP S/ DISCR ET E b?E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical n-channel planar epitaxial junction field-effect transistors in plastic TO-92 variants, intended fo r VHF and UHF amplifiers, mixers and general purpose switching.

OP222

Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B

Contextual Info: N AMER P H X L X P S / D X S C R E T E 'IVAV.vlu^O*M % S7D D bt,S3T31 ' 1 QDD7Q7fl fc, C E R A M IC STRI INLINE RF TR A N SISTO R S r. . M ILITARY ' INSTRUMENTATION CO M M UNICATIO NS <-s s -;s -'-'s -:-:-;s -r-r-:-:x s ^ ;v X S S v S •»:■vx-xwivj:"*:

PBYR12045TV

Abstract: PBYR12035TV PBYR12040TV d794 M3356 PBYR12045T m3351 T0327 m3353 Philips rectifier F 793
Contextual Info: DEVELOPMENT DATA ° bt>S3T31 0 0 2 2 ^ 3 3 2SE D T h is d a ta sheet c o n ta in s advance in fo r m a tio n and PBYR12035TV PBYR12040TV PBYR12045TV s p e c ific a tio n s are su b je c t t o change w it h o u t n o tic e . N AMER PHILIPS/DISCRETE 7-03-2]

BSP15

Abstract: BSP19
Contextual Info: N AMER PHILIPS/DISCRETE ESE D • bfc>S3T31 QQlh24B S ■ 64 Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. TYPE ’ - ’ • ■ -• . - RATINGS PACKAGE VcBO VCEQ V ¥ NPN (cont.) BF622 BF722 BF822 BSP20 BST40 SOT-89 SOT-223 SOT-23 SOT-223 SOT-89

Contextual Info: L _ _ _ _ _ N AMER PHILIPS/DISCRETE ObE D • bbSB'lBl O O l S O n & _ ■ LWE2015R y y P 2 i - o r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.

Contextual Info: TIP31; A TIP31B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A SILICON EPITAXIAL BASE POWER TRANSISTORS N PN transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. PNP complements are T IP 3 2 series.

Contextual Info: Philips Components MZ0912B50Y u ia ^ n t i e s c m iw n u u u ioks D a ta s h e e t s ta tu s P re lim in a ry ep e d flca tfo n d a te o l le a v e J u ly 1 9 9 0 NPN silicon planar epitaxial m icrowave pow er transistor FEATURES APPLICATION d e s c r ip t io n

BDX96

Contextual Info: • BDX92 BDX94 BDX96 ^ 5 3 1 3 1 QDHQQSI 3 N AMER PHILIPS/DISCRETE 3SE D JV SILICON EPITAXIAL B A SE POW ER TRAN SISTO RS P-N-P transistors in TO-3 envelope for audio output stages and general amplifier and switching applications, N-P-N complements are BDX91, B D X 9 3 and BDX95.

Contextual Info: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

2N3820

Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET

Contextual Info: “ N AMER PHILIPS/DISCRETE 2SE D ' ~ II 1.^53*131 0022553 fl • d y VSd SERIES 7 ~ -n 3 -l<c ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended for

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BTY79

Abstract: KAV10 BYT19 M2881 BTY79 10A BYT79
Contextual Info: - . N AMER P H I L I P S / D I S C R E T E 5 SE D • - f b b 5 3 *i3 1 0 G2 E 4 â 3 I 5 ■ BYT79 SERIES 7 ^ 0 3 - 17 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward

BR216

Abstract: M2480
Contextual Info: 2SE D • bb53T31 OOaESbT II □ I BR216 A N AMER P H I L I P S / D I S C R E T E 7 - 2 ^ - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR 2 16 is a m onolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts norm ally in one direction, but in the other direction it acts as a

Contextual Info: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET: SPNovaTM RGB SPNova: 20mA SPNova TM Featuring a staggering brilliance and significant flux output, the SPNova showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra

BUZ54A

Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
Contextual Info: N AMER PHI LI PS /D IS CR ET E übE D P o w e r M O S transistor " • ^53=131 0014724 S B U Z 54A T - 2 ^ -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: I N AMER PHILIPS/DISCRETE 25E D • . ^— f , bbSBTBl 0052353 5 ■ BY249F SERIES T - O l- \7 _ , [ ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended for power rectifier applications. Their electrical isolation makes them ideal for mounting on a common heatsink

Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53^31 0036351 354 H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

Contextual Info: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 • BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A,

Contextual Info: PMHgs Sem iconductors Productsgee Iflcatlon 6N135/6N136 High-speed optocouplere FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC insulation 2500 V (RMS /3500 V (DC) for the 6N135 and

M3105

Abstract: BY359F BY359F-1500 IEC134 M2296 BY359h
Contextual Info: I I N AMER PHILIPS/DISCRETE 25E D • bb53T31 0055351 7 ■ MAINTENANCE TYPE BY359F—1500 T - Ö Z - I 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery

BDT41

Abstract: BDT41A BDT41B BDT42 TIP41
Contextual Info: SSE D N AMER PHILIPS /DI SCRETE • 11 1^53=531 0Qlei713 □ ■ BDT41;A BDT41B;C I T - 33 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The T IP41 series is an equivalent type. P-N-P complements are B D T 4 2 series.

k 246 transistor fet

Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.