S1950 Search Results

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

S1903

Abstract: S1950 Saronix 24 MHz oscillator
Contextual Info: SaRonix Crystal Clock Oscillator 3.3 & 5V, ACMOS, TTL, SMD Technical Data S1903 / S1950 Series Frequency Range: 32 MHz to 125 MHz S1903 80+ MHz to 125 MHz (S1950) Frequency Stability: ±20, ±25, ±32, ±50 or ±100ppm over all conditions; calibration tolerance, operating temperature, input voltage change, load change,

SMD circuits MARKING CODE AA

Abstract: S1903 S1950
Contextual Info: SaRonix Crystal Clock Oscillator 3.3 & 5V, ACMOS, TTL, SMD Technical Data S1903 / S1950 Series Frequency Range: 32 MHz to 125 MHz S1903 80+ MHz to 125 MHz (S1950) Frequency Stability: ±20, ±25, ±32, ±50 or ±100ppm over all conditions; calibration tolerance, operating temperature, input voltage change, load change,

5V Crystal Clock Oscillator

Abstract: S1903 S1950 S19xx
Contextual Info: S1903 and S1950 Series 3.3V and 5V ACMOS/TTL, High Frequency Crystal Clock Oscillator XO Actual Size = 5 x 7mm Product Features • 3.3V or 5V ACMOS/TTL compatible logic levels Pin Functions Packaging Outline • Very tight frequency stability available

Contextual Info: S1903 and S1950 Series 3.3V and 5V ACMOS/TTL, High Frequency Crystal Clock Oscillator XO Actual Size = 5 x 7mm Product Features • 3.3V or 5V ACMOS/TTL compatible logic levels Pin Functions Packaging Outline • Very tight frequency stability available

Contextual Info: RICOM P PE Crystal Clock Oscillator 3.3V & 5V, ACMOS, TTL, SMD Technical Data S1903 / S1950 Series Frequency Range: 32 MHz to 125 MHz S1903 as rated 80+ MHz to 125 MHz (S1950) as rated Up to 160MHz available, contact SaRonix for details Frequency Stability:

Contextual Info: SaRonix Crystal Clock Oscillator 3.3 & 5V, HCMOS, TTL, SMD Technical Data S1903 / S1950 Series Frequency Range: 50+ MHz to 125 MHz S1903 80+ MHz to 125 MHz (S1950) Frequency Stability: ±25, ±50 or ±100ppm over all conditions; calibration tolerance, operating temperature, input voltage change, load change, aging(1

MIL-S-19500

Contextual Info: Who I HEW LETT W!kM P A C K A R D H erm etic Lamps Hewlett-Packard offers a complete line of hermetically sealed solid state lamps, hi-rel screened to m ilitary specifica­ tions, and listed on MIL-S19500 Qualified P arts List QPL . • JAN and JANTX hermetic

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

ttl crystal oscillator 5.0 volt

Abstract: ir 9922 S1903 S1950 Saronix 100 MHz oscillator Saronix CRYSTAL oscillator
Contextual Info: SARONIX B.V. DATA SHEET 9922 518 721. series Crystal Clock Oscillator Type S1903/S1950 CerOx in ceramic package (ACMOS/TTL) Product specification Supersedes date of 1998 July 14 File under SARONIX B.V., SBV2 1999 Feb 09 SaRonix B.V. Doetinchem, The Netherlands

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

of bakelite material

Abstract: S19-501
Contextual Info: Customer Information Sheet DRAWING No.; 519-501 SHEET 2 OF 2 | IF IN DOUBT - ASK | c | NOT TO SCALE | 12.70- THIRD ANGLE PROJECTION A LL DIMENSIONS IN mm •4.70 ■ 'j- m | (S fN s> Si NOTES: 1. TO BE USED WITH PROBES P19-XX21. 2. SUITABLE FOR A MINIMUM DISTANCE BETWEEN

MIL-S-19500/578

Abstract: JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 Sep 94. INCH-POUND MIL-S-19500/578B 8 June 1994 SUPERSEDING MIL-S-19500/578A 19 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, SILICON, SUITCHING

xo 405 mf

Abstract: SM 8002C staa9fc SG-615PH C nct040c saronix nch060c hosonic crystal cross reference saronix NTH069C Siward crystal xtal Saronix STAA9FC
Contextual Info: GENERAL COMPETITOR CROSS REFERENCE Manufacturer Part Number Abracon Abracon Abracon Abracon Abracon Abracon Bliley Champion Champion Champion Champion Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen Citizen

phase shifter circulator

Abstract: 83601-2
Contextual Info: DATA SHEET SKY14151-350LF: 0.1-2.5 GHz High Power SP4T Switch With Decoder Applications • GSM/WCDMA/EDGE datacards and handsets  Mobile high power switching systems RF1 RF2 ANT RF3 Features  Broadband frequency range: 0.1-2.5 GHz  Low insertion loss: 0.40 dB @ 1 GHz, 0.45 dB @ 2 GHz with

LN 358

Abstract: LN 358 n 4562b f1n diode 2812B
Contextual Info: Microisemi Corp. I ? T h e d io d e e x p e n s / SANTA ANA, CA SCOTTSDALE, A Z I 1N2804 thru 1N2846B and 1N4557B thru 1N4564B For m ore inform ation call: 602 941-6300 FEATURES SILICON 50 WATT ZEN ER DIODES . ZENER VOLTAGE 3.9V to 200V . AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

1N560

Abstract: ic 4016 1N551 of ic 4016 1N561 IC 4011 D0DD12S 9SS diode
Contextual Info: NIL SPECS I C | G D D D 1 2 S DGDllflT 2 | f - o - i - u MIL-S-19500/167B NAVY NOTICE 1 25 September 1986 I NOTICE I [OF VALIDATIONl MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N560 AND 1N561 MIL-S-19500/167B(NAVY), dated 19 February 1968, has been reviewed & determined to be

4026 IC

Abstract: CI 4016 in276 1N276 IR411 ic 4081 ci 4081
Contextual Info: niL SPECS IC | G D D D 1 5 S □□57Bclb 1 | I INCH-PQ1JND~T MIL-S-19500/192B 6 October 1989 superseding-MIL-S-19500/192A 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N276, JAN, JANTX, ANO JANTXV This specification 1s approved for use by all Departments and

1N55328-1

Abstract: mil-s-19500 qpl jantx1n5518b 1N5521B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 4551 Group 1N5546B-1
Contextual Info: The d o c u m e n t a t i o n and p r oc es s c o n v e r s i o n | me a s u r e s ne c e s s a r y to comp ly wi t h th is j r e vi si on shall be co m p l e t e d by 2 0 M a r c h 19 95 j j INCH-POUND ] 1-1 j | | - 1

1N1742A

Abstract: 1N1742 MIL-S-19500 1N742A 1N742 MIL marking diode military part marking symbols origin semiconductor diode
Contextual Info: NIL SPECS i c | □□□Q125 00D3fl47 5 | M I L - S - 1 9 5 0 0 / 2 9 8 U SA F I NOTICE I IOF VALIDATION l NOTICE 1 17 AUGUST 1987 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N742A MIL-S-19500/298(USAF) and Amendment 3, dated 24 July 1968, have been reviewed &

1N3647

Abstract: 1N3646 CI 4016 ic 3645 sh ln3644 1N3644 1N3645 DD03L 1N3992
Contextual Info: i c | □□00125 DODBbOfl b | MIL SPECS MIL-S-19500/279C NAVY AMENDMENT 3 23 Ja n u a ry 1973 SUPERSEDING 1/ AMENDMENT 2 16 O c to b er 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPES 1N3644, 1N3645, 1N3646, AND 1N3647 This amendment form s a part of Military Specification

IN457A

Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
Contextual Info: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4'!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH TX2N3032 This Amendment forms o port of M ilitary

Contextual Info: 1N 42 45 thru 1N 42 49 iJ W Microsemi Corp. r fte chode experts SANTA A N A , CA F o r m o re in fo rm a tio n call: 714 979-8220 MILITARY RECTIFIERS FEATURES • MICROM INIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED G LASS PACKAGE • TRIPLE LAYER PASSIVATION