S1318 Search Results

Siemens diode Ssi

Contextual Info: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vbs 800 V b 1.5 A ffDS on Package Ordering Code 8 £2 TO-220 AB C67078-S1318-A2 Maximum Ratings Symbol Parameter Values Unit A Continuous drain current

BUZ 78

Abstract: C67078-S1318-A2 142 mh
Contextual Info: SIPMOS Power Transistor BUZ 78 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 78 800 V 1.5 A 8.0 Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current, TC = 25 ˚C

S1518

Abstract: S131* crystal ST1518 S1318
Contextual Info: SARONIX B.V. DATA SHEET 9922 517 622. series Voltage Controlled Crystal Oscillator Type S1318/S1518 in plastic S package CMOS/TTL Product specification File under SARONIX B.V., SBV2 1998 July 14 SaRonix B.V. Doetinchem, The Netherlands Product specification

S1518

Abstract: smd 1518
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator 3V, 5V, HCMOS, SMD Technical Data S1318 / 1518 Series ACTUAL SIZE Frequency Range: 32 MHz to 120 MHz Frequency Stability: ±50 ppm over all conditions: operating temperature, voltage change, load change, calibration tolerance, aging, with VC = 2.5V @ 5V,

BUZ 78

Contextual Info: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vds 800 V h ^DS on Package Ordering Code 1.5 A 8 fi TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current ¡D Values

C67078-S1318-A2

Contextual Info: BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 78 800 V 1.5 A 8Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current

S1518

Abstract: S1318 ST1518 E 32.0000 C 100 khz crystal Saronix Oscillator SMD Plastic DS171
Contextual Info: SaRonix Voltage Controlled Crystal Oscillator 3.3 & 5V, HCMOS, SMD Technical Data S1318 / S1518 Series Frequency Range: 32 MHz to 125 MHz Frequency Stability: ±50 ppm over all conditions: operating temperature, voltage change, load change, calibration tolerance, aging, with VC = 2.5V @ 5V,

C67078-S1318-A2

Contextual Info: BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 78 800 V 1.5 A 8Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ54

Abstract: s 271 5A BUZ357 BUZ84A BUZ,271 C67078-S1318-A2 BUZ54A C67078-S1010-A3 C67078-S1010-A2
Contextual Info: SIEM EN S SIPMOS" Leistungstransistoren SIPMOS Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Wds V n ¡o A ^D S on m ax Ptot W Bestellnummer Ordering code Gehäuse Package Bild Figure BUZ 78 800 8.0 1.5 40 C67078-S1318-A2

SKY73126-31

Abstract: ID31 S1191 S1315 S1317
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 30 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.032 ID (A)

Contextual Info: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four

SKY73126-31

Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: SPICE Device Model SiE868DF www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:

Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP

Contextual Info: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization:

7m812

Abstract: IDT7M S1319 Idt7m812
Contextual Info: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS

Contextual Info: 512K 64K x 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • 64K x 8 fu lly s y n ch ro n o u s m em ory • H ig h -s p e e d -2 0 M H z read c y c le tim e • 16-bit syn ch ro n o u s a dd re ss Input • 8-bit synchronous data Input • S y n ch ro n o us c h ip se le ct a n d w rite e na b le

Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm

Contextual Info: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C