S1317 Search Results

Contextual Info: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

"buz 75"

Abstract: BUZ75 C160 C67078-S1317-A2 C67078-S1317-A3 buz 73
Contextual Info: SIEM ENS BUZ 73 BUZ 73 A SIPMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated Type v DS To ^DS on Package 1> O rdering Code BUZ 73 200 V 7.0 A 28 "C 0.4 Q TO-220 AB C67078-S1317-A2 BUZ 73 A 200 V 5.5 A 37 °C 0.6 n TO-220 AB C67078-S1317-A3

C67078-S1317-A2

Contextual Info: BUZ 73 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 73 200 V 7A 0.4 Ω TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1317-A2

Contextual Info: BUZ 73 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 73 200 V 7A 0.4 Ω TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

bu 508 df

Contextual Info: SIEMENS BUZ 73 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 A Yds 200 V b 5.5 A flbSion Package Ordering Code 0.6 n TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

C67078-S1317-A3

Abstract: BUZ73A
Contextual Info: BUZ 73A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 73 A 200 V 5.5 A 0.6 Ω TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current

buz73

Abstract: BUZ73A
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 73 BUZ 73 A • N channel • Enhancement mode • Avalanche-rated Type ^DS Id Tc ^DS on Package 1> Ordering Code BUZ 73 200 V 7.0 A 28 "C 0.4 Si TO-220 AB C67078-S1317-A2 BUZ 73 A 200 V 5.5 A 37 "C 0.6 Q TO-220 AB

R414

Abstract: siemens 230 99 o SIEMENS EC 230 99
Contextual Info: SIEMENS BUZ 73 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 Vbs 200 V b 7A flbSion 0.4 f l Package Ordering Code TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Id

all transistor book

Abstract: SMD DIODE BOOK TRANSISTOR SMD MARKING CODE 607 transistor marking smd 7c TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD 613 smd transistor AFQ 36 C67078-S1317-A3 diode SMD MARKING CODE 607 smd code book
Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds fc ^DS on Package Ordering Code BUZ 73 A 200 V 5.5 A 0.6 i i TO-220 AB C67078-S1317-A3 Maximum Ratings Symbol Parameter Continuous drain current Values Unit A b 5.5

C67078-S1317-A3

Contextual Info: BUZ 73 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 73 A 200 V 5.5 A 0.6 Ω TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1317-A2

Abstract: 4512c
Contextual Info: BUZ 73 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 73 200 V 7A 0.4 Ω PG-TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current

SKY73126-31

Abstract: ID31 S1191 S1315 S1317
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

pd 3174

Abstract: ACS35
Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • High-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four

Contextual Info: SPICE Device Model SQ2325ES www.vishay.com Vishay Siliconix P-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si7308DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiE818DF www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET

Contextual Info: IS0808 B U R R -B R O W N I 1 Isolated 12-Bit Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 100kHz SAMPLING RATE T he I S 0 8 0 8 is a lo w -p o w er isolated sam p lin g A D C u sin g state-of-the-art C M O S structures and high v o lt­ • 1500Vrms ISOLATION CONTINUOUS

Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiE882DF www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S-1317

Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: IDT 7MP456 256K 64K x 4-BIT CMOS STATIC RAM PLASTIC SIP MODULE FEATURES: DESCRIPTION: • H ig h -d en sity 2 56 K (64K x 4) C M O S sta tic R A M m o d u le T h e ID T7M P456 is a 2 5 6 K (64K x 4-bit) h ig h -sp e e d static R A M m o d u le co n stru cte d o n a n e p o x y lam in ate su rfa ce u sin g four