RN6001 Search Results
RN6001 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RN6001 | Toshiba | Pre-Biased Digital Transistor | Original | 82.45KB | 3 | ||
| RN6001 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 89.18KB | 1 |
RN6001 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RN6001
Abstract: RN5001
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Original |
rn6001rn5001sc-62-10ma | |
RN5001
Abstract: RN6001
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Original |
rn6001rn5001sc-62 | |
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Contextual Info: TOSHIBA RN6001 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N fi n n 1 U nit in mm M O TO R DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4 .6 M A X . POWER SW ITCHING APPLICATIONS. 1.7 M A X . W ith Built-in Bias Resistors Simplify Circuit Design |
OCR Scan |
rn6001rn5001 | |
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Contextual Info: SILICO N P N P EPITAXIAL T Y P E RN6001 M O T O R DRIVE CIRCUIT APPLICATIONS. U n it in mm PO W ER AM PLIFIER APPLICATIONS. l f6M AX. PO W ER SW ITCH IN G APPLICATIONS. 1.7 MAX. 0 . 4 ± 0 .0 5 . W ith B uilt-in Bias Resistors Simplify C ircuit Design Reduce a Q uantity of P a rts and M anufacturing Process |
OCR Scan |
rn6001rn5001--30v | |
2-5K1A toshibaContextual Info: RN6001 RN6001 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Small Flat Package P q = 1~2W (Mounted on Ceramic substrate) |
OCR Scan |
rn6001rn5001sc-62--30v+1 | |
RN6001Contextual Info: RN6001 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN6001 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process |
Original |
rn6001rn5001sc-62 | |
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Contextual Info: T O SH IB A RN6001 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN6001 Unit in mm M O TO R DRIVE CIRCUIT APPLICATIONS. 4.6MAX. 1.7 MAX. POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design |
OCR Scan |
rn6001rn5001 | |
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Contextual Info: RN5001 RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER A M PLIFIER APPLICATIONS. P O W ER SW IT C H IN G APPLICATIONS. J53= 1.7MAX. W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process |
OCR Scan |
rn5001rn6001 | |
2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
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OCR Scan |
2n39032n39042n39052n3906+16 | |
Marking XA XB XC XD XE XF XH XI XJ XK XM
Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
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OCR Scan |
rn1101rn1102rn1103rn1104+16 | |
T1 MARKINGContextual Info: RN5001 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5001 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 4.6MA.X. With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process |
OCR Scan |
rn5001rn6001961001eaa2t1 marking | |
RN2226
Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
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OCR Scan |
2sc18152sa1015ot-23mod/rn1501+8 | |
RN1417
Abstract: rn4601
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rn1001rn1002rn1003rn1004+8 | |
2SC144
Abstract: 2SD466 2sc5266
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OCR Scan |
t258-omifax062sc1442sd466+1 | |
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Contextual Info: RN5001 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN5001 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 4.6MAX. 1.7 MAX. POWER SWITCHING APPLICATIONS. With Built-in Bias Resistors Simplify Circuit Design |
OCR Scan |
rn5001rn6001 | |
2-5K1A toshibaContextual Info: SILICON NPN EPITAXIAL TYPE RN5001 U nit in mm M O T O R DRIVE CIRCUIT APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. 1.6 MAX0-4±0.05 PO W ER SW ITCHIN G APPLICATIONS. • W ith Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process |
OCR Scan |
rn5001rn60012-5k1a toshiba | |
RN5001
Abstract: RN6001
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Original |
rn5001rn6001sc-62961001eaa2 | |
NPCE781BA0DX
Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
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Original |
512mb64mx16bc995rgpio45+11 | |
high frequency diode
Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
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OCR Scan |
rn1421rn2421100vjy2sc2873+14 | |
RN5001
Abstract: RN6001
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Original |
rn5001rn6001sc-62 | |
RT1N137P
Abstract: RT1N140C RT1P137P RT1P141C RN2503 RN2504 RN2505 RN2506 RN2507 RN2508
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OCR Scan |
rnz501rs/2502rn2503rn2504+11 | |
2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
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Original |
sc-63/64sc-62sc-59ot-23+16 | |
2sc 1203
Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
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OCR Scan |
1815l2sc22402sc16272sc752g+16 | |
ERI - 35 - 2 YE 0515
Abstract: transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
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OCR Scan |
80min120-4o22kilrn1001+12 | |