64MX16B Search Results

Contextual Info: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary

H5MS1G62

Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
Contextual Info: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

hynix nand 1G

Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

HY27US081G1M

Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
Contextual Info: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed

85X15

Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
Contextual Info: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

FBGA 63

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary

hynix nand flash otp

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary

HY27UF081G2A

Abstract: HY27UF081G2A-FP HY27UF081G2A-S HY27UF 63FBGA hynix nand 1G HY27UF161G2A Y27UF081G2A HY27UF081G2AFP
Contextual Info: HY27UF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 200PIN DDR2 667 SO-DIMM 1024MB With 64Mx16 CL5 TS128MSQ64V6Q Description Placement The TS128MSQ64V6Q is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 200PIN DDR2 800 SO-DIMM 1GB With 64Mx16 CL6 TS128MSQ64V8W Description Placement The TS128MSQ64V8W is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8W consists of 8pcs 64Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read

HY27SF081G2A

Abstract: HY27SF081G2AFP 128M*8BIT 64mx16 hynix nand 1G 63FBGA nand flash HYNIX 1gb
Contextual Info: HY27SF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27SF081G2A HY27SF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

64MX16

Contextual Info: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: HY27US 08/16 1G1M Series HY27SS(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.1 Defined Target Spec. Mar. 2004 Preliminary

64Mx16bit

Contextual Info: White Electronic Designs W3E64M16S-XSTX 64Mx16bit DDR SDRAM FEATURES Double-data-rate architecture; two data transfers per clock cycle All inputs except data & DM are sampled at the positive going edge of the system clock CK Bidirectional data strobe (DQS)

BA4111

Abstract: RA13 H55S1G62MFP
Contextual Info: 1GBit MOBILE SDR SDRAMs based on 16M x 4Bank x16I/O Specification of 1Gb 64Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY27SFXX1G2M

Abstract: HY27UF HY27 hynix hy27
Contextual Info: HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read

hynix hy27

Abstract: hynix nand HY27 hynix nand PROGRAMMING HY27S HY27UF hy27uf08 hynix nand 1G hynix nand flash reset nand flash HYNIX
Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003

hy27 nand

Contextual Info: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 History 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read

HY27UF081G2A

Abstract: "NAND Flash" HY27UF hy27uf161g2a
Contextual Info: Preliminary HY27UF 08/16 1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.