RFL2N05 Search Results

TA9520

Contextual Info: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement

Contextual Info: RFL2N05, RFL2N06 HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFL2N05 RFL2N06 S H a rris N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package • 2A, 50V and 60V T O -2 0 5 A F • RDS on = 0 .9 5 ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: RFL2N05, RFL2N06 fÇ j HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFL2N05L

Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
Contextual Info: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M

2N06

Abstract: RFL2N05 RFL2N06 RFP4N05 RFP4N06
Contextual Info: Standard Power M O S F E T s - RFL2N05, RFL2N06, RFP4N05, RFP4N06 File N u m be r 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V ro s o n = 0.60 and 0.750 Features: • SOA is power-dissipation limited

RFL2N05L

Contextual Info: h a r r RFL2N05L RFL2N06L i s A u g u st 1991 N -Channel Logic Level Power Field-Effect Transistors L2 FET Package Features • 2A, 50V and 60V T O -2 Û 5 A F B O TTO M VIEW • rDS(ON) = 0.95ÎÎ • Design Optimized for 5V Gate Drives GATE SOURCE • Can be Driven Directly from QMOS, NMOS, T T L Circuits

2C337

Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
Contextual Info: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750

RFL2N06

Abstract: rfl2n05 AN7254 TB334
Contextual Info: RFL2N05, RFL2N06 Semiconductor 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

RFL2N05L

Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
Contextual Info: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■

Contextual Info: RFL2N05, RFL2N06 S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

2N06

Contextual Info: 2 3 H a r r i s F L 2 N 0 5 R F L 2 N 0 6 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features • R Package 2A, 50V and 60V T O -20 5 A F • RDS on = 0 .9 5 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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2N6901

Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
Contextual Info: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: