TA09378 Search Results

Contextual Info: RFL2N05, RFL2N06 HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFL2N05, RFL2N06 fÇ j HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFP4N05, RFP4N06 Semiconductor October 1998 Data Sheet 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

RFL2N06

Abstract: rfl2n05 AN7254 TB334
Contextual Info: RFL2N05, RFL2N06 Semiconductor 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

AN7254

Abstract: AN7260 RFP4N05 RFP4N06 TB334
Contextual Info: RFP4N05, RFP4N06 June 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFL2N05, RFL2N06 S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such