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RFHA1003 Datasheets (2)

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RF Micro Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RFHA1003PCBA-410		RF Micro Devices	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF EVAL FOR RFHA1003 PA	Original	PDF		11
RFHA1003SQ		RF Micro Devices	RF Amplifiers, RF/IF and RFID, RF AMP 9W 512MHZ	Original	PDF		11

RFHA1003 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 30mhz 512mhz ds120216	PDF
RFHA1003S2 Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 30mhz 512mhz ds121114 +1rfha1003s2	PDF
rfha1003 Contextual Info: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 512mhz 30mhz ds120102	PDF
RFHA1003SQ Abstract: 30MHz to 512MHz Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 30mhz 512mhz ds120216 +2rfha1003sq 30mhz to 512mhz	PDF
RFHA1003S2 Contextual Info: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density	Original	rfha1003 30mhz 512mhz ds131018 +1rfha1003s2	PDF
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 30mhz 512mhz ds120216	PDF
Gan hemt transistor RFMD Abstract: DS111007 tl 4941 Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	rfha1003 30mhz 512mhz ds111007 +2gan hemt transistor rfmd tl 4941	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	upc8236 mrfe6vp m74 7 segment display mounting and soldering of rf transistors +6mobile jammer gsm 1800 mhz circuit diagram blf4g08ls-160a rf amplifier mhz doherty 470-860 rf transceiver 802.11ac an10882 m74 7 segment display input	PDF
VCO-102 Abstract: NBB-502 spf-5189 RF5643wda cxe-2089 Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high	Original	vco-102 nbb-502 spf-5189 rf5643wda +1cxe-2089	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Contextual Info: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	prf957 tff1003hn tff1007hn tff1014hn +16tff1015hn tff1017hn tff11070hn tff11073hn tff11077hn tff11080hn ba 7891 ng bts 2140 1b tff1014 blf4g08ls-160a bf1107 spice model bf862 spice model rf transceiver 802.11ac multiple output lnb 802.11ac bgu6104	PDF
RFHA1000 Contextual Info: RFMD. High-Power GaN Power ICs RFMD’s GaN Power ICs PICs are wideband power amplifiers designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios, and general	Original	rf3826 rfha1000 rfha1003 rfha1006 +1-40oc	PDF
Integrated Synthesizers with Mixers Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services	Original	11f-b integrated synthesizers with mixers digital step attenuators 3g/4g power amplifiers +7catv amplifiers catv hybrid amplifier modules gain blocks linear amplifiers low noise amplifiers variable gain amplifiers wifi power amplifiers	PDF
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Contextual Info: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	6 pin transistor smd code caa tea6721 bf991 spice model	PDF