RFHA1003S2 Search Results
RFHA1003S2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology |
Original |
rfha100330mhz512mhzds120216 | |
RFHA1003S2Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology |
Original |
rfha100330mhz512mhzds121114+1 | |
RFHA1003SQ
Abstract: 30MHz to 512MHz
|
Original |
rfha100330mhz512mhzds120216+2 | |
RFHA1003S2Contextual Info: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density |
Original |
rfha100330mhz512mhzds131018+1 | |
|
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology |
Original |
rfha100330mhz512mhzds120216 |