512MHZ Search Results

NTE364

Contextual Info: NTE364 Silicon NPN Transistor RF Power Description: The NTE364 is designed for UHF large signal applications required in industrial and commercial FM equipment operating at 512MHz. Features: D Specified 10 Volt, 512MHz Characteristics: Power Output = 10W Minimum Gain = 6.0dB

SD1422

Contextual Info: SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

vhf power module

Abstract: mapm-020512-040c00
Contextual Info: MAPM-020512-040C00 Broadband UHF/VHF Power Module 20 - 512 MHz, 40W M/A-COM Products Preliminary - 8/23/07 Pr Features • • • • • • • Broadband operation 20 - 512MHz Output power: 40W CW Power gain: > 10dB Rugged push-pull FET External bias control

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1444 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 4.0 WATTS GP = 12.0 dB MINIMUM COMMON EMITTER

COMTELCO

Abstract: Antennas radome radome in antenna A2543B A2543W
Contextual Info: COMTELCO A2543B, A2543W 440-512 MHz 3dB gain LOW PROFILE ANTENNA Technical Specification Performance: Ultra Wideband antenna for the 440-512MHz band providing slightly better than 3dB gain. Stylish and Durable: These antennas are manufactured using the

TB197

Abstract: L8821P
Contextual Info: TB197 L8821P Pout vs Pin, Freq=512MHz, Vds=12.5Vdc, Idq=0.2A 4.0 12.25 Linear @ 160mw 12.00 P1dB = 1.9W 3.5 11.75 11.50 3.0 11.25 2.5 Pout 11.00 10.75 2.0 Gain 10.50 10.25 1.5 10.00 1.0 9.75 Efficiency @ 2W=44% 9.50 0.5 9.25 0.0 0.05 0.1 0.15 0.2 0.25 Pin in Watts

Contextual Info: MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 26.6±0.2 21 .2±0.2 2-R1.5±0.1 £1 HL <j>0.45 a 1 © I1- 6±1 13.7±1 PIN: 18 .8±1 0 P in 23.9±1

Contextual Info: MITSUBISHI RF POWER MODULE M57714SH 490-512MHz, 12.5V, 7W, FM MOBILE RADIO PIN : Pin DVCC1 V cc 2 ®VCC3 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. OC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS (Te = 2 5 X unless otherwise noted

NTE480

Abstract: transistor 38W
Contextual Info: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.

NTE365

Abstract: uhf 3W amplifier
Contextual Info: NTE365 Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:

NTE368

Abstract: transistor C 548 B
Contextual Info: NTE368 Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic:

NTE367

Abstract: 45W UHF
Contextual Info: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

Contextual Info: MITSUBISHI RF POWER MODULE M67705H 470-512MHz, 9.6V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 45+1 R 1.6 ± 0 . 5 in o •H m 0.4 ± 0.2 5 ±1 9+1 9± 1 PIN : 5 + 1 8.5 ±1 P in : RF INPUT ©VCC1 :■ 1st. DC SUPPLY 36. 5 @VBB : BASE BIAS

Contextual Info: b 2 4 T 6 2 T GG17113 2 4 2 • MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM PIN : P in @VCC1 @VCC2 VCC3 ®P0 ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS 10 = 25% unless otherwise noted

M67703SH

Contextual Info: MITSUBISHI RF POWER MODULE M67703SH 490-512MHz, 12.5V, 45-50W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm ^ ¡> —II—@ HH- PIN : © P in : RF INPUT VCC1 : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY ®PO : RF O UTPUT ® G N D : FIN

M108

Abstract: transistor t1W SD1132-5
Contextual Info: H M «-» J IV IIC rO S e m i P ro g re s s P o w e re d b y T ech no log y 140 Commerce Drive Montgomeryville, PA 1 8936-1013 Tel: 215 631-9840 SD1132-5 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS CLASS C TRANSISTOR FREQUENCY 470MHz

RS-204-C

Contextual Info: Mobile Duplexers 470-512MHz ◆ Features - T-Band The 6CT duplexer is a compact unit, using TEM coaxial resonators that are tunable over the 470 to 512MHz frequency range. They are designed to accommodate the TX, RX spacing of 3MHz used in this mobile band but are

M68732SH

Abstract: 490-512MHZ
Contextual Info: MITSUBISHI RF POWER MODULE M68732SH SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY

Contextual Info: MITSUBISHI RF POWER MODULE M57721 4 5 0 — 5 1 2 M H z , 1 - 5 W, FM PO RTABLE RADIO DESCRIPTION OUTLINE DRAWING M57721 is a thick film RF power module specifically de­ signed for 4 5 0 ~ 512MHz, 1 W ~ 5W FM portable sets. Dimensions in mm 45 ± 1 42 ± 1

Contextual Info: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO BLOCK DIAGRAM ©HH- PIN : © P in : RF INPUT @ VCC1 : 1st. DC SUPPLY @ V C C 2 : 2 n d . DC SUPPLY @VCC3 : 3 rd . DC SUPPLY PO : RF OUTPUT ® G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE 001745a mt m lb " M67749SHR 490-512MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM <2 1) PIN : ® P ln : RF INPUT V C C 1 : 1st. DC SUPPLY @VBB : BASE BIAS SUPPLY ®VC C2 : 2nd. DC SUPPLY

TB224

Abstract: D02BZ2 Amidon ferrite
Contextual Info: October 31, 2012 TB224 Frequency=30-512MHz Pout=1.5W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=13-18% SP201 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com October 31, 2012 TB224 Pout/Gain vs Pin: Freq=30MHz, Vds=28Vdc, Idq=0.2A