RFD4N06L Search Results

Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in

AN7254

Abstract: RFD4N06L RFD4N06LSM TA09520 TB334
Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in

RFD4N06L

Abstract: RFD4N06LSM rfd4n06
Contextual Info: • 43 055 71 0 0 5 4 35 3 b31 ■ HAS h a fr r is RFD4N06L RFD4N06LSM N-Channel Logic Level Power Field Effect Transistors August 1991 Packages Features TO-251 AA TOP VIEW • 4A, 60V • RDS on = o .6on I SOURCE • Design Optimized for 5 Volt Gate Drive

TA09520

Abstract: AN7254 RFD4N06L RFD4N06LSM TB334
Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs File Number 2837.1 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in

Contextual Info: in te fs il RFD4N06L, RFD4N06LSM D a ta S h e e t J u n e 1999 • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in applications such as programmable controllers, automotive

Contextual Info: RFD4N06L, RFD4N06LSM S e m iconductor D ata S h eet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b er 2837.1 Features • 4 A ,6 0 V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically

AN7254

Abstract: RFD4N06L RFD4N06LSM TA09520 TB334
Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet Title FD4 6L, D4 6LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA June 1999 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD4N06L, RFD4N06LSM are N-Channel enhancement

RFD4N06L

Abstract: RFD4N06LSM
Contextual Info: m H RFD4N06L RFD 4N 06LSM a r r is N-Channel Logic Level Power Field Effect Transistors August 1991 F ea tu re s P a cka g es • 4A, 60V T O -2 S 1A A T O P V IEW • RDS on = o.eon ^3 SO U RC E • Design Optimized for 5 Volt Gate Drive • Can be Driven Directly From Q-MOS, N-MOS, or TTL

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

IRF510N

Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
Contextual Info: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

MOSFET 60V 75A

Abstract: NCH 60V 20A huf76439p3 HUF76639 100V 8A N-Channel MOSFET Power MOSFET 50V 20A
Contextual Info: in terrii " I N-Channel Logic Level MOSFETs I Power M O SFE T Products PAGE N-Channel Test Circuits and W aveform s. 6-5 HPLR3103,

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V

complementary of irf830

Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Contextual Info: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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