FDD66 Search Results

FDD6672A

Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

CBVK741B019

Abstract: F63TNR FDD6680 FDD6690A
Contextual Info: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior

FDD6680A

Abstract: FDU6680A
Contextual Info: FDD6680A/FDU6680A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Mosfet FDD

Abstract: ON 534 TO252 fdd 690
Contextual Info: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6635

Contextual Info: FDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V

FDD6680A

Contextual Info: FDD6680A N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior

Contextual Info: FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6676S

Abstract: FDS6676S
Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDD6680A

Abstract: FDU6680A
Contextual Info: FDD6680A/FDU6680A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6606

Contextual Info: FDD6606 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6632

Contextual Info: FDD6632 N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

FDD6612A

Abstract: FDU6612A
Contextual Info: FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6688

Abstract: FDU6688 FAST RECOVERY DIODE 1A
Contextual Info: FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDU6692

Abstract: Mosfet FDD FDD6692 fairchild power trench mosfet fdd
Contextual Info: FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDD6670A

Contextual Info: =Ml C O N D U C T O R tm FDD6670A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N -C hannel Logic level M O S F E T is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state

fdd6635

Abstract: 6635 fet
Contextual Info: FDD6635 tm 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V

FDD6670AL

Contextual Info: FDD6670AL 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDD6670A

Contextual Info: FDD6670A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

6680 equivalent ic no

Abstract: FDS6680S CBVK741B019 F63TNR FDD6680 FDD6680A FDD6680S FDS6680
Contextual Info: FDD6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

6680 MOSFET

Abstract: CBVK741B019 F63TNR FDD6680 40V 14A TO-252 14A, 50V, Logic Level, N-Channel TO-252 Mosfet FDD
Contextual Info: FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FDD6685

Contextual Info: FDD6685 30V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench • –40 A, –30 V. RDS ON = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V

Contextual Info: FDD6635 tm 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS ON = 10 mΩ @ VGS = 10 V

Contextual Info: FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications ̈ Typ rDS on = 9.7mΩ at VGS = -10V, ID =- 14A ̈ Inverter ̈ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A ̈ Power Supplies ̈ Typ Qg(10) = 45nC at VGS = -10V ̈ ̈ High performance trench technology for extremely low