RA258 Search Results

Contextual Info: AUTOMOTIVE RECTIFIERS 8.0 AMPERES TO 35 AMPERES 50 VOLTS TO lO O O VOLTS V \ typeno ! 50 100 200 400 600 800 1000 CASE lo ( A | \ 8.0 RT805 RT81 RT82 RT84 RT86 RT88 RT810 RT-8 25 RA2505 RA251 RA252 RA254 RA256 RA258 RA2510 RA 35 RA3505 RA351 RA352 RA354

RA254

Abstract: RA2505 RA251 RA252 RA256 RA258
Contextual Info: RA2505 . RA258 RA2505 . RA258 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2008-10-30 Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 800 V Plastic case Kunststoffgehäuse

Contextual Info: AUTOMOTIVE RECTIFIERS Io A 25 PACKAGE \ 35 RA O U T L IN E \(m m /Typ.) V rrm • \ (Volts) \ 50 RA2505 RA3505 100 RA251 RA351 200 RA252 RA352 400 RA254 RA354 600 RA256 RA356 800 RA258 RA358 1000 RA2510 RA3510 1.0 1.2 It 25 35 TC 150 105 %SM <A) 400 400

1N188A

Abstract: pj 87 1N1184 1N1206RA 1N1183 1N1202RA 1N1204A 1N1204RA 1N1206A 1N367
Contextual Info: POWER RECTIFIERS, Stud Package, Standard Recovery IS I P art N um ber Ma x im um A v e ra g e R e c tifie d C u rre n t a t I. A m p s T, ( C) 1N12Ô2A 1N1204A M a xim u m Peak F o rw a rd V oltage at I, „ and T .= 2 5 -C M a x im u m M a x im u m Rev C u rre n t Rev C u rre n t

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: C RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION AUTOMOTIVE RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-25 Amperes FEATURES * Low cost * Low leakage * Low forw ard voltage drop * High current capability RA MECHANICAL DATA * Copper heat sink * Tin-plated slug easy for soldering

AP256

Abstract: ap25 AP2510 AP255 RAT2405 RAT241 RT805 RT81 RT810 RT82
Contextual Info: AUTOMOBILE RECTIFIERS Alili L O PE R A T IN G AND ST O R A G E T E M P E R A T U R E - 6 5 °C to +175°C TYPE Maximum Peak Reverse Voltage PR V > < < V PK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz io@ t a IFM Surge "C SbE D PASTER INSTRUMENT

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

Contextual Info: GRECTRO N SEMICONDUCTOR TECHNICAL SPECIFICATION AUTOMOTIVE RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-25 Amperes FEATURES * Low cost * Low leakage * Low forw ard voltage drop * High current capability MECHANICAL DATA * Copper heat sink * Tin-plated slug easy for soldering

Contextual Info: RA2505 I n ter n a tio n a l thru S e m ic o n d u c to r , I n c . RA2510 HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100 °C

Contextual Info: Modular Adaptor Kits T7T Modular Adaptor Kits - Programmable Wiring, Mates with DB9, DB15 & DB25 Eliminate the annoyance of screwing and unscrewing bulky and expensive data cables whenever you wish to move a peripheral. Simply replace with an appropriate Modular Adaptor listed below. Each unit is

RA361

Abstract: RA2505 RA251 RA252 RA253 RT805 RT81 RT810 RT82 RT84
Contextual Info: RECTRON LTD 5 4 E I • 7 ti l 0 2 4 2 000G0E7 4 T-oi-ot AUTOMOBILE RECTIFIERS OPERATING AND STORAGE TEMPERATURE -65°C to +175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current

RA2505

Abstract: RA251 RA2510 RA252 RA254 RA256 RA258 Diotec Semiconductor
Contextual Info: RA2505 . RA2510 RA2505 . RA2510 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2011-03-01 Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 1000 V Plastic case Kunststoffgehäuse

RA254

Abstract: RA2505 RA251 RA252 RA253 RT805 RT81 RT810 RT82 RT84
Contextual Info: RECTRCN ELECTRONIC 1SE 0 | 71,10240 0000014 ? | AUTOMOBILE RECTIFIERS ^ o \-o K OPERATING AND STORAGE TEMPERATURE -6 5 °C to +175°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

RA2505

Contextual Info: RA2505 . RA2510 RA2505 . RA2510 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2014-07-30 6.2 4.2 ±0.2 Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 1000 V

Contextual Info: Telecom / Modular DESGR1PTI0N 1-9 10-24 25-99 100- 249250 - 499 ] mqpel P rem ium M o d u la r A d a p to r Kits - D esign Features M o ld e d K nurled H o ld d o w n ' crews The increased p o p u la rity o f m odular adaptors prompted L -c o n i to o ffe r an o ff-th e -s h e lf [ : otiticS that is

fri57

Abstract: SB3040C LN5820 HYM15 fh107 15ie rs2006 SB3030C SB3020C HFM1011
Contextual Info: ALPHABETICAL INDEX P/N PAGE 1A1. . 27 P/N PAGE P/N PAGE 1N4937. . 25 1.5KE10. . 10 P/N 1.5KE110. PAGE _11 P/N PAGI 5KP14. . 12 . 12 1A2. . 27 1N4937G. . 35 1.5KE10A. . 10 1.5KE110A. . 11 5IP14A.

Contextual Info: 8 7 6 4 5 THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF L-COM, INC. ANY REPRODUCTION IN PART OR WHOLE WITHOUT THE WRITTEN PERMISSION OF L-COM, INC. IS PROHIBITED. D 3 2 1 REVISIONS REV .63 DESCRIPTION DATE APPROVED A RELEASED FOR PRODUCTION