PZB16 Search Results

Contextual Info: • N AMER PHILIPS/DISCRETE □bE D ■ bbS3T31 D01S1S3 1 ■ PZB16035U _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A r-3 3 -u % MICROWAVE POWER TRANSISTORS N-P-N transistor fo r use in common-base, class-B, am plifier under c.w. conditions in m ilita ry and professional applications up to 1,6 GHz.

Philips CD 303

Abstract: PZB16040U
Contextual Info: « N AUER P H IL IP S / D IS C R E T E U t V h L U P M t N I OLE ]> • U À IA bbSBTBl O D IS IS T 2 ■ " ■ PZB16040U This data sheet contains advance information and specifications are subject to change w ithout notice. J V r-s 3 ~ n M IC R O W A V E PO W ER TRA N SISTO R

PZB16035U

Abstract: discrete transistor amplifier 2.5 ghz
Contextual Info: N AMER PHILIPS/DISCRETE □ bE D • bb53*i31 Q01S1S3 1 ■ L PZB16Ô35U r-33-it MICROWAVE POWER TRANSISTORS N-P-N transistor for use in common-base, class-B, amplifier under c.w. conditions in military and professional applications up to 1,6 GHz. Features

Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

transistor 38W

Abstract: transistor 38W 3 pin 38w transistor PZB16035U SC15 transistor 38W 16
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

transistor Common Base amplifier

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

PZB16035U

Abstract: SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZB16035U NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

Transistor 3d

Abstract: PZB16040U
Contextual Info: ^ 3 3 - / / PZB16040U M AINTENANC E TYPE PHILIPS INTERNATIONAL 5t.E D 711DÖSb 004b500 470 • PHIN MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C narrowband power am plifier, operating at a frequency o f 1.64 GHz.

FO-102

Abstract: ODU microwave PZB16050U
Contextual Info: 70 RF/Microwave Devices M icrow ave Transistors, Continuous Power Package Outline Pi 111 _ Type No. cont. f (GHz) Gp (dB) (%) 8 8.5 8 7 6.8 7 5.6 6 7 45 45 45 45 35 35 35 35 40 tie CLASS B, HIGH POWER (cont.) PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U

Contextual Info: r-33-// PZB16040U A M AINTENANC E TYPE PHILIPS INTERNATIONAL SLE D TllDÔBb 0D4b50G 47D « P H I N MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C narrowband power am plifier, operating at a frequency o f 1.64 GHz.

Contextual Info: BSE D N AtlER PHILIPS/DISCRETE • 1,1,53^31 001fc>B33 4 ■ -p -33 ~o\ Power Devices 55 MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE ♦ PL G HZ VCE (V ) (W> (« ) Gp nc <% ) CLASS C, MEDIUM POWER PTB23001X PTB23003X PTB23005X FO-41B

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Philips Semiconductors Selection Guide

Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

Contextual Info: S im m * Product Range of Traction Batteries DEPEN DABLE BS Type MOTIVE POWER •■ T yp e 32 A h T yp e 42 A h D im e n s io n m m } ±2 158 » H e ig h t ( 1 ± 2 • H e ig h t ( 2 ) ± 2 L e n g th 271 259 L e n g th ( ± 5% ) A h (C 5 ) 158 335 323

LFE15

Abstract: LAE4001R BLS2731-50 BLS2731-10
Contextual Info: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

OP222

Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition