P4KE130 Search Results

DO-213AA

Contextual Info: Micmsemi Bi-Directional TVS Part Number MLL1.4KESD90CA P4KE120C P4KE120CA 1.4KESD100C MLL1.4KESD1OOC MLL1.4KESD1OOCA P4KE130C P4KE130CA 1.4KESD110C MLL1.4KESD110C MLL1.4KESD110CA 1.4KESD120C MLL1.4KESD120C MLL1.4KESD120CA P4KE150C P4KE150CA 1.4KESD130C MLL1.4KESD130C

DO-41

Abstract: JANTX1N6461 DO41 13517
Contextual Info: Transient Voltage Suppressors Part Number Microsem i Division •fjv P4KE82A P4KE91 P4KE91A P4KE100 P4KE100A P4KE110 P4KE110A P4KE120 P4KE120A P4KE130 P4KE130A P4KE150 P4KE1S0A P4KE160 P4KE160A P4KE170 P4KE170A P4KE180 P4KE180A P4KE200 P4KE200A P4KE220 P4KE220A

Contextual Info: P4KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional

Contextual Info: P4KE SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P4KE SERIES FEATURE Plastic package. Glass passivated chip junction in DO-204AL/DO-41 Package 400W peak pulse power capability on 10/1000 s waveform. Excellent clamping capability. Low zener impedance.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: II1DRGE P4KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 6 . 8 to 440 Volts 400 Watt Peak Power 1.0 Watt Steady State FEATURES • Plastic package has Underwriters Laboratory Flam m ability Classification 94V -0 • Glass passivated chip junction in DO-41 package

P4KE11A

Abstract: P4KE10A Lite-On Power Semiconductor
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS P4KE SERIES REVERSE VOLTAGE - 6.8 to 440 Volts POWER DISSIPATION - 400 WATTS DO-41 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

P4KE10

Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE440 P4KE440CA
Contextual Info: TVS P4KE SERIES GPP TRANSIENT VOLTAGE SUPPRESSOR 400 WATT PEAK POWER 1.0 WATT STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excellent clamping capability Low zener impedance

Contextual Info: Transient Voltage Suppression Diodes Axial Leaded – 400W > P4KE series P4KE Series RoHS Description The P4KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

Contextual Info: P4KE Series Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors d * e d n nge e t x E e RaFeatures g a t l Vo V BR Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 440V Peak Pulse Power 400W DO-204AL (DO-41 Plastic)

202E

Abstract: P4KE10 P4KE10A P4KE11 P4KE440A P4KE440CA oc 108
Contextual Info: SHANGHAI SUNRISE ELECTRONICS CO., LTD. P4KE6.8 THRU P4KE440CA TECHNICAL SPECIFICATION TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 400W FEATURES DO - 41 • 400W peak pulse power capability • Excellent clamping capability • Low incremental surge resistance

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

P4KE10

Abstract: P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13
Contextual Info: P4KE SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State FEATURES l l l l l l l l DO-41 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Glass passivated chip junction in DO-41 package

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

24CA/BZ

Abstract: SMBJ11CA BFM 39a IFR 9540 5KE15C 816 6v8a SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA
Contextual Info: TM Micro Commercial Components TRANSIENT VOLTAGE SUPPRESSORS MCC Part Number Uni-Polar Breakdown Voltage VBR @ IT Volt Bi-Polar Min Max Reverse Standoff Voltage Vwm Maximum Reverse Leakage IR @Vwm Maximum Clamping Voltage Vc @ Ipp mA V A V A %/℃ 10.5

P4KE6V8A

Abstract: P4KE10
Contextual Info: TVS Diodes P4KE-Series Transient Voltage Suppressor Diodes Type DO-41 Plastic Package T A = 25 °C Test Current Voltage Range tp = 300 ¡MS Leakage Current Pulse Range tp = 1 ms Pulse Current V rsm max V max A 10V°C 5.7 Ir s m V(BR)1) min V V p R ) 11 m axV

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 400 Watt Peak Power ■ Dimension Dim Millimeters Inches Min Max Min Max A 25.4 - 1.000 - B 4.20 5.20 0.165 0.205 C 0.70 0.90 0.028 0.034 D 2.00 2.70 0.080 0.107 DO-41 ■ Specification

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

P4KE180A

Abstract: P4KE18A
Contextual Info: MCC TM Micro Commercial Components P4KE6.8 C A THRU P4KE550(C)A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Unidirectional And Bidirectional Low Zener Imdepance

GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
Contextual Info: MCC TRANSIENT VOLTAGE SUPPRESSORS 400W TVS / DO-41 MCC PART NUMBER P4KE6.8 P4KE6.8A P4KE7.5 P4KE7.5A P4KE8.2 P4KE8.2A P4KE9.1 P4KE9.1A P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 P4KE15A P4KE16 P4KE16A P4KE18 P4KE18A P4KE20 P4KE20A P4KE22

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

DO-204AL

Abstract: JESD22-B102 J-STD-002 P4KE250 P4KE250C P4KE440CA P4KE540A
Contextual Info: P4KE6.8 thru P4KE540A Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty