OP169 Search Results

Contextual Info: OPTEK TECHNOLOGY INC OhE D | bTTÛSflO 0000114 b | Optoelectronics Division T-4»-| T R W Electronic Components Group Product Bulletin S054 January 1985 7#?«rV GaAs Plastic Infrared Emitting Diodes Types OP169SL, OP169SLD, OP169SLC .050 1.27) .165(4.18)'

Contextual Info: . O PTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

DP509

Abstract: diameter lens phototransistor OP169 OP169A OP169B OP169C
Contextual Info: 0 . OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings T a = 25° C unless otherw ise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

OP168F

Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

Contextual Info: 0OTOK Product Bulletin OP169 June 1996 G aAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 2 5 ° C u n le ss otherw ise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

OP169SL

Abstract: OP169SLC OP169SLD OP509 WMth-100
Contextual Info: OPTEK TECHNOLOGY INC DhE D | bTTôSûD o o o o i m Optoelectronics Division I X -m -i TRW Electronic Components Group Product Bulletin S054 January 1985 GaAs Plastic Infrared Emitting Diodes Types 0P169SL, OP169SLD, OP169SLC •054 1371 rn. .050(1.27) 1 .100(2.54)

OP169SL

Abstract: OP169SLD
Contextual Info: OPTEK TECHNOLOGY INC OhE D | bTTÛSflO 0000114 b | Optoelectronics Division T -m -i TRW Electronic Components Group 7 # ? tV Product Bulletin S054 January 1985 GaAs Plastic Infrared Emitting Diodes Types OP169SL, OP169SLD, OP169SLC .050 1.27) b“ I 1 .100(2-54)

OP169

Abstract: OP169A OP169B OP169C OP509
Contextual Info: OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers

Contextual Info: 0 OPTEK Product Bulletin OP169 April 1993 G aAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C 1-.100(2.54 NOM tV-1 CATHODE J_ 0 8 5 (2.16) .07511.911 ! 1 Ö .165(4.19) .155(3.94) , 500112.70] _ 4 — .150(3.81),. M IN 1 14013.56) .064(1.631

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

Contextual Info: @.OPIEK Product B ulletin O P509 June 1996 NPN Silicon Phototransistors Types OP509A, QP509B, QP509C Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers

induction cooker fault finding diagrams

Abstract: TC227 compressor catalogue Vernitron TRANSDUCER b2 str 1265 smps power supply circuit of tv ADC0804-1CD TC225 tesla MAa 741 SPICE model NTC Inrush Current Limiters Thermistor XR558CP
Contextual Info: BOOK IC11 LINEAR PRODUCTS page Selection guide Functional in dex. 5 Numerical in d e x .

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

OP169

Abstract: OP269 OP509 OP509A OP509B OP509C
Contextual Info: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP5Q9A, QP509B, OP5Q9C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package

Contextual Info: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP509A, OP509B, QP509C Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers