OP294 Search Results

OP295

Abstract: OP290 OP294 OP299
Contextual Info: @ OPTEK Product B ulletin O P294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features Absolute M axim um R atings <Ta = 2 5 ° C unless otherw ise noted • Characterized at 5mA for battery operated systems or other low drive current systems

Contextual Info: ^ ^O P TEK P rod uct B ulletin OP294 June 1996 GaAIAs Plastic Infrared Emitting Diode Types OP294, OP299 .310 7.87 .290 (7.37) * FOR IDENTIFICATION PURPOSES. ANODE LEAD IS .060 (1.52) NOM. LONGER THAN CATHODE LEAD. — .040 { 1.02) .225 (5.72) ANODE .205 (5.21)

OP295

Contextual Info: 0 . OPTEK Product Bulletin OP294 April 1993 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 D IM ENSIO N S ARE IN INCHES MILLIMETERS Features Absolute Maximum Ratings (Ta = 25°C unless otherwise noted) • Characterized at 5mA for battery operated systems or other low drive

Contextual Info: OPTEK Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 .3 1 0 7 .B 7 .2 9 0 (7 .3 7 1 • FOR ID E N T IF IC A T IO N PURPOSES. ANODE LEAD IS ,0 6 0 ( 1 . 5 2 ) NOM. LONGER THAN CATHODE LEAD. — .0 4 0 (1 .0 2 )

OP290

Abstract: OP294 OP295 OP299
Contextual Info: Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • Characterized at 5mA for battery Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V

OP295

Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

LM741 texas instruments

Abstract: LM723 MC1723 lm317 lm337 lm301a NJM4580, ne5532 LM353 equivalent tl494 hitachi ha2500 LM353 TEXAS st tl074 LF353 equivalent TSSOP
Contextual Info: R E A L W O R L D S I G N A L P TM R O C E S S I N G Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

OP295

Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

Op amp cross reference

Abstract: LMC6482 equivalent AD882 "operational amplifier selection guide" tlC272 equivalent TLC2274 TLC274 replacement LMC6032 equivalent OP421 equivalent LMC6464A
Contextual Info: M a r c h 19 9 8 Vo l u m e 1 OPERATIONAL AMPLIFIERS Low Power, Rail-to-Rail Op Amps in SOT-23 Package - TLV2711/21/31 10.5 V/ s 5.1 MHz FASTER SLEW RATE TLV2772 TLC227X TLC450X TLC220X TLC226X TLV2442 TLV226X TLC225X TLV225X TLV2432 TLV2422 FASTER BANDWIDTH

UC38438

Abstract: LM709 equivalent LM1458B UC28428 xr-l555 UC28448 uc28438 TL2843 UC2843 HA358 MC33076
Contextual Info: AD542—AU2904 Competitor’s Generic Device Name* Texas Instruments Equivalent Device* Pin Count Available Packages Temperature Range Usage Code† AD542 TLE2161 8 PDIP 0° to 70°C, -40° to 85°C Q AD544 TLE2061 8 PDIP, SOP 0° to 70°C, -40° to 85°C

OP295

Abstract: OP290 OP298B OP297FAB OP298 OP296 OP297 OP299 T-46 OP291
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP291 OP292 OP294 OP296 OP297 OP298 OP299 T-46
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP290C OP291 OP292 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

TL2843 uc2843

Abstract: LM353 equivalent LM308 replacement National Semiconductor voltage regulator lm7812 HA358 LM6572 lm741 motorola TL2843 Equivalent Device LT1201 regulator xr-l555
Contextual Info: T H E W O R L D L E A D E R I N D S P A N D A N A L O G Analog Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers July 2000

OP297FAB

Abstract: OP295 OP290 op295b
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an