OP298 Search Results

PW-110

Abstract: PW110 d 5072 H 9311 OP293A UTA 107 OP293 OP293C OP298 OP298D
Contextual Info: OPTEK TECHNOLOGY INC QbE D | o a D D i 3 a b T ^ a s a o a I O p to e le c tr o n ic s . D iv is io n T R W Electronic C om p o n e n ts G rou p T - 4 ! " Product Bulletin 50 72 January 1985 T R 'w V G a A IA s P la stic Infrare d Em ittin g Diodes Types OP293C, Bf A , OP298D, C, B , A

OP293

Abstract: OP293A OP293B OP293C OP298 OP298A OP298B OP298C OP593 OP598
Contextual Info: OPTEK P ro d u c t B u lle tin OP293 Ju n e 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series Features A b s o lu te M axim um R atin gs Ta = 25° C unless otherwise noted • Wide irradiance pattern (OP293 series) • Narrow irradiance pattern (OP298

OP293

Abstract: OP293A OP293B OP293C OP298 OP298B OP298C OP593 OP598 0DD25
Contextual Info: 0 . OPTEK Product Bulletin OP293 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series Features Absolute Maximum Ratings T a = 25° C unless otherwise noted • Reverse V o lta g e .

Contextual Info: QPTEK Product Bulletin OP293 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Wide irradiance pattern (OP293 series) • Narrow irradiance pattern (OP298

AKD n

Contextual Info: OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series 225 5.72 . .03 (0.76) .215 (5 .46)H (NOTE 13) -*iF-+ :§(ü!SONOM AN ODE 1 .10012.54) fT \ NOM moDE CATHODE “ T u MEASUREM ENT S U R F A C E (NOTES 8 & 10}

Contextual Info: O P T E K T E C H N O L O G Y I N C Q b E D | b T T f l S Ô Q 0 0 0 Q 1 3 E Û | O p to e le ctro n ics. D iv is io n T R W Electronic Components Group froduct Bulletin 50 72 January 1985 G a A IA s Plastic Infrared Em itting Diodes Types OP293C, B, A , OP298D, C, B, A

OP298B

Abstract: OP293 OP293A OP293B OP293C OP298 OP298C OP593 OP598
Contextual Info: O P IL K Product Bulletin OP293 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series . .022 0.56 MAX (CATHODE INDICATOR) Features A b s o lu te M a x im u m R a tin g s (T a = 25° C unless otherw ise noted) • Wide irradiance pattern (OP293

te 2395

Abstract: OP293 OP293A OP293B OP293C OP298 OP298B OP298C OP593 OP598
Contextual Info: Q>B OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series 9in is sui U .^ .1 5 ,72 .03 0.76) (NOTE 13) “H ” H » ANpOE . .215 (5.46) in 'm!SQ N0M • .015(0.38) j .100 (2.54) NOM CATHODE MEASUREMENT SURFACE.

OP298B

Abstract: OP293 OP293A OP293B OP293C OP298 OP298C OP593 OP598 LIL flange
Contextual Info: OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series .230 S.84 ‘ .210(5.33)' .225 (5.72) . .03(0.76) (NOTE 13) ml in op!SQ N0M .015 (0.38) ANODE i— 190 (4 .83 ) .178 ( 4 . 62 ) . I _ Fj 1 ^ V

Contextual Info: @ . OPTEK P roduct B ulletin OP293 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series Features A bso lu te M axim um R atings T a = 25° Cunless otherwise noted • W ide irradiance pattern (OP293 series) • Narrow irradiance pattern (OP298

led and phototransistor pair number

Abstract: transistor 24 led phototransistor pair OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

OP295

Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

0P2938

Abstract: WT 5072 00D0135 0P298 OP293C OP298 OP298D optek and 1983
Contextual Info: O P T E K T E C H N O L O G Y I N C O b E D | b 7 ci a S â ü Q 0 D D 1 3 a fl 77KV O p to e le c tro n ic s . D iv is io n T R W Electronic Com ponents Group T - m - | a Product Bulletin 5 0 72 January 1985 G a A IA s Plastic Infrared Em itting Diodes T y p e s

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

P297A

Abstract: P297C OP295
Contextual Info: 0 O P T E K Product Bulletin OP295 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted • N arrow irradiance pattern • Significantly higher pow er output than

led phototransistor 3 pin

Abstract: OP298 OP598 OPB100 OPB100EZ OPB100-EZ OPB100-SZ OPB100Z led and phototransistor pair number
Contextual Info: Optical Emitter and Sensor Pair OPB100Z, OPB100EZ, OPB100SZ Features: • • • • • • 890 nm infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36” 91.4 cm Low profile package 24” (61.0 cm) wire leads

SMD PLCC-2 1210

Abstract: smd transistor nm OP505 circuit VCSEL lens array TRANSISTOR 935 SMD Plastic Encapsulate Diodes OP233 935 diode smd transistor A 935 opv302
Contextual Info: 1742-2012:QuarkCatalogTempNew 9/17/12 4:59 PM Page 1742 TEST & MEASUREMENT 20 Optical Components A subsidiary of TT electronics plc Phototransistors Vertical Cavity Surface Emitting Laser VCSEL RoHS OPV380 OPV302 OPV382 OPV332 OP802SL OP802WSL OP505 OP506

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900

OP123

Abstract: OP124 OP140 OP165 OP166 OP169 OP223 OP265 OP266
Contextual Info: Converting Radiant Intensity in Units of mW/cm2 to mW/sr. Application Bulletin 222 Radiant intensity is commonly measured in units of power per steradian and power per area. The SI standard is power per steradian. Optek’s standard is power per area. Many customers will design their

OP295

Contextual Info: 0 . OPTEK Product Bulletin O P295 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP295, OP296, OP297 Series Features • Narrow irradiance pattern • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’s peak

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

Contextual Info: @ OFTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN

OP295

Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an