OP509 Search Results

TI-131

Contextual Info: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K

Contextual Info: @.OPIEK Product B ulletin O P509 June 1996 NPN Silicon Phototransistors Types OP509A, QP509B, QP509C Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers

OP169

Abstract: OP269 OP509 OP509A OP509B OP509C
Contextual Info: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP5Q9A, QP509B, OP5Q9C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package

Contextual Info: OPTEK Product Bulletin OP509 June 1996 NPN Silicon Phototransistors Types OP509A, OP509B, QP509C Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers

7500B

Abstract: OP269SLA OP269SLB OP269SLC OP509 HA 1166
Contextual Info: OPTEK TECHNOLOGY INC DtE D I fc^lflSflO DOODlSt S I TRYw O p t o e le c tr o n ic s 'D iv is io n T R W Electronic Components Group Product Bulletin 5068 January 1985 G a A IA s Plastic Infrared Em ittin g Diodes Types OP269SLC, OP269SLB, OP269SLA . JM L3 2 L

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: . O PTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

OP169SL

Abstract: OP509SLC OP509SLD
Contextual Info: OPTEK TEC HNOLOGY INC ObE D | L ^ û S â O 0000154 7 Optoelectronics- D ivision TRW E le c tro n ic C o m p o n e n ts G r o u p Product Bulletin 5 1 1 4 TRYw | Ja n u a ry 19 8 5 N P N Silicon Phototransistors Types QP509, OP5Q9SLD, 0P509SLC Features Ab solu te M a xim u m Ra tings

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

OP168F

Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

11C1 diode p

Abstract: mml 600 OP169SL OP509 OP509SLC OP509SLD
Contextual Info: OPTEK TECHNOLOGY INC ObE D | hTTSSaO 00□D154 7 | O p to e le ctro n ics' D iv is io n T R W Electronic C o m p o n e n ts G ro u p 7 7 W V Product Bulletin 5 1 1 4 January 1985 NPN Silicon Phototransistors Types QP509, 0P5Q9SLD, QP509SLC F e a tu re s A b s o lu te M a xim u m R a tin g s IT a - 2 5 °C unless otherwise noted

OP169

Abstract: OP269 OP509 OP509A OP509B OP509C
Contextual Info: @ .O PIEK Product Bulletin O P509 June 1996 NPN Silicon Phototransistors Types OP5Q9A, QP509B, OP5Q9C Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted) • Lensed for high sensitivity • Easily stackable on 0.100 inch (2.54 mm) hole centers

Contextual Info: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers

Contextual Info: 0OTOK Product Bulletin OP169 June 1996 G aAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 2 5 ° C u n le ss otherw ise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

KT853

Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Contextual Info: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE

OP269

Abstract: OP269A OP269B OP269C OP509
Contextual Info: . OPTEK Product Bulletin O P269 Jun e 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP269A, OP269B, OP269C A b so lute M axim um Ratings Ta = 2 5 ° C unless otherw ise noted Continuous Forward C u rre n t. 50 mA

KT853

Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Contextual Info: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4

OP169SL

Abstract: OP169SLC OP169SLD OP509 WMth-100
Contextual Info: OPTEK TECHNOLOGY INC DhE D | bTTôSûD o o o o i m Optoelectronics Division I X -m -i TRW Electronic Components Group Product Bulletin S054 January 1985 GaAs Plastic Infrared Emitting Diodes Types 0P169SL, OP169SLD, OP169SLC •054 1371 rn. .050(1.27) 1 .100(2.54)

Contextual Info: 0 . OPTEK P roduct B ulletin OP269 June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP269A, OP269B, OP269C Features A b so lu te M axim um R atings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54

transistor 935

Abstract: OPB607A OPB606B phototransistor as sensor OPB606 OPB606A OPB607 OP165 OP268 OPB606C
Contextual Info: Reflective Object Sensor OPB606A, OPB606B, OPB606C OPB607A, OPB607B, OPB607C Features: • Choice of phototransistor OPB606 or photodarlington (OPB607) output • Unfocused for sensing diffuse surface • Low cost plastic housing • Filtered (OPB606, OPB607)

OP169

Abstract: OP169A OP169B OP169C OP509
Contextual Info: OPTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54 mm) hole centers

OP268

Abstract: OP165 OPB606 OPB606A OPB606B OPB606C OPB607A OPB607B OPB607C transistor 935
Contextual Info: Reflective Object Sensor OPB606A, OPB606B, OPB606C OPB607A, OPB607B, OPB607C Features: • Choice of phototransistor OPB606 or photodarlington (OPB607) output • Unfocused for sensing diffuse surface • Low cost plastic housing • Filtered (OPB606, OPB607)