NE68133 Search Results

ic 741 free

Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

ic 741 free

Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

Contextual Info: NE68133 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

2SA1977

Abstract: NE68133 NE97733 S21E
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

2SC3584

Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for

Contextual Info: SILICON TRANSISTOR NE97733 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz

02E-12

Contextual Info: NONLINEAR MODEL NE68133 SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 IS 2.7e-16 Parameters MJC 0.56 Q1 BF 185 XCJC UNITS Parameter Units time seconds capacitance farads

transistor c 3228

Abstract: LI-01/transistor k 0247
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES_ • HIGH G AIN B A NDW IDTH PRODUCT: fT = 8.5 G Hz TYP • HIGH SPEED SW ITC H IN G CH ARA CTERISTICS • NPN C O M PLIM EN T AVA ILAB LE: NE68133 • HIGH IN SERTIO N PO W ER GAIN:

Contextual Info: NE68133B Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

NE68018

Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10

Transistors BF 494

Abstract: Transistor BJT 547 b transistor kf 469
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)

NE66100

Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178